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The EMH25FHAT2R is a dual pre-biased NPN digital transistor manufactured by ROHM Semiconductor. It integrates two NPN transistors with built-in bias resistors in a compact SOT-563 (EMT6) surface-mount package. The device features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a DC current gain (hFE) minimum of 80 at 10 mA, a transition frequency (fT) of 250 MHz, and a power dissipation rating of 150 mW. It is qualified to AEC-Q101 standards for automotive reliability.
Verify the specific suffix 'FHAT2R' against official ROHM documentation to confirm pinout compatibility and resistor values. Confirm AEC-Q101 qualification status if automotive use is required. Check datasheet for latest thermal derating curves and ensure operating temperatures remain within specified limits during procurement planning.
Select this component when a dual NPN digital transistor with integrated biasing is required for automotive or industrial applications. Consider the 50 V voltage rating and 100 mA current capacity against load requirements. Evaluate the SOT-563 footprint constraints and verify that the 250 MHz transition frequency meets the signal processing speed needs of the target application.
This part belongs to the ROHM EMH series of dual digital transistors designed for automotive electronics. It utilizes silicon planar technology and offers a compact alternative to discrete transistor-resistor networks. The EMT6 package provides efficient thermal management and PCB real estate savings compared to traditional through-hole solutions.
Public confirmed substitute part numbers are not available in the provided source material. Consult official ROHM cross-reference guides for verified alternatives.