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The EMH2FHAT2R is a dual digital transistor manufactured by ROHM Semiconductor, featuring two NPN transistors integrated into a single SOT-563 (EMT6) package. This component belongs to the complex transistor category, specifically designed as a dual bias resistor built-in transistor (DTR). It operates with a maximum collector-emitter voltage of 50V and supports a continuous collector current of 100mA per channel. The device is qualified under the AEC-Q101 standard for automotive applications, ensuring reliability in demanding environments. Key electrical parameters include a power dissipation rating of 150mW and a maximum operating temperature of +150°C. The typical input resistance is available in values such as 1kΩ or 47kΩ, with corresponding emitter-base resistances.
Verify the specific suffix and revision level against the official ROHM datasheet to ensure compatibility with existing designs. Confirm that the AEC-Q101 qualification status meets project requirements. Check for any end-of-life notifications or recommended replacement parts if sourcing for new production runs.
Select this component when a dual NPN digital transistor solution is required in a small footprint. Ensure the input resistance values match the driving interface requirements. Verify thermal management capabilities given the 150mW power dissipation limit in the SOT-563 package.
This part is part of ROHM's series of complex transistors designed to replace multiple discrete components. It simplifies PCB layout by integrating two transistors and their associated biasing resistors into one package, reducing component count and assembly time.
Check for direct pin-compatible alternatives from ROHM or other manufacturers if supply constraints exist. Ensure any substitute maintains the same NPN+NPN polarity, voltage ratings, and package dimensions.