EMH2T2R

EMH2T2R

$0.45
  • Description:TRANS 2NPN PREBIAS 0.15W EMT6
  • Series:-

SKU:c9fb5f8157d9 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMH2T2R

Overview

The EMH2T2R is a dual digital transistor (Bias Resistor Built-in Transistor) manufactured by ROHM Semiconductor. It integrates two NPN transistors with built-in bias resistors in a compact SOT-563-6 surface-mount package. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA per element. The device features a typical input resistance (R1) of 47 kOhms and an emitter-base resistance (R2) of 47 kOhms for both channels. Power dissipation is rated at 150 mW, with a maximum operating temperature of +150°C. The DC current gain (hFE) ranges from 120 to 560.

Feature Summary

  • Integrates two NPN transistors with built-in bias resistors in a single compact package
  • Simplifies circuit design by reducing component count and board space requirements
  • Suitable for differential amplifier circuits and high-frequency crystal oscillators

Applications

  • Differential amplifier circuits
  • High-frequency crystal oscillators
  • Starters and various general-purpose switching applications

Procurement Notes

Verify the specific ordering suffix T2R to confirm tape-and-reel packaging containing 8000 units per reel. Confirm RoHS compliance status through official documentation before integration. Ensure the supply status is active for new designs, as some related family members may carry different lifecycle statuses. Cross-reference the exact part number against the manufacturer's latest datasheet to avoid substitution errors.

Selection Notes

Select this component when a dual NPN configuration with 47 kOhm base resistors is required. The 50 V rating and 100 mA current capacity suit low-to-medium power switching tasks. Consider the SOT-563 footprint constraints during PCB layout. Verify thermal management capabilities given the 150 mW power dissipation limit in the small outline package.

Part Context

This part belongs to ROHM's EMH series of complex transistors, specifically designed for applications requiring multiple discrete components to be replaced by a single integrated unit. The EMH2 variant specifically pairs two identical NPN digital transistors, offering symmetry useful in balanced circuit topologies.

Replacement Considerations

The EMX2 is listed as a similar level replacement with the same package and specification profile. Both parts share the SOT-563 form factor and NPN+NPN polarity. Verify pinout compatibility and exact resistor values if substituting directly into existing designs.

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