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The EMH3FHAT2R is a dual NPN digital transistor from ROHM Semiconductor, housed in an SOT-563-6 surface-mount package. It integrates bias resistors for automotive applications and meets AEC-Q101 qualification standards. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 150 mW. The device features a gain-bandwidth product (fT) of 250 MHz, a DC current gain (hFE) ranging from 100 to 600, and a collector-emitter saturation voltage of 300 mV. It operates at temperatures up to +150°C.
Verify the NRND status before integration, as this designation indicates the component is not recommended for new designs. Confirm that existing supply chains can sustain production volumes without interruption. Ensure compatibility with current automotive qualification requirements despite the end-of-life recommendation. Review datasheet revisions for any parameter shifts affecting legacy systems.
Select this component only if the SOT-563-6 footprint and 50V/100mA ratings align precisely with the design constraints. Consider the NRND status carefully; alternative active parts may offer better long-term availability. Verify that the 150 mW power dissipation and +150°C temperature limit meet the specific thermal management requirements of the target application environment.
This part belongs to ROHM's series of dual digital transistors designed for space-constrained automotive electronics. The SOT-563 package allows for high-density mounting on printed circuit boards. As a complex transistor, it replaces multiple discrete components, reducing board space and assembly complexity while maintaining reliable performance in harsh automotive conditions.
Check for direct pin-compatible alternatives within the same ROHM family or other manufacturers offering identical 50V/100mA dual NPN specifications in SOT-563 packages. Ensure any substitute also holds AEC-Q101 certification if required for the specific automotive application.