EMH3T2R

Overview

The EMH3T2R is a dual pre-biased NPN bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor. It integrates two NPN transistors with built-in bias resistors in a compact SOT-563-6 surface-mount package. The device features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical specifications include a transition frequency (fT) of 250 MHz, a power dissipation (Pd) of 150 mW, and a minimum DC current gain (hFE) of 100 at specified test conditions. The component supports operation up to a maximum junction temperature of +150°C.

Feature Summary

• Integrates dual NPN transistors with built-in bias resistors for simplified circuit design
• Optimized for high-speed switching applications with a 250 MHz transition frequency
• Compact SOT-563-6 surface-mount packaging for space-constrained designs

Applications

• General-purpose switching circuits
• Driver stages for logic interfaces
• Signal conditioning in consumer electronics

Procurement Notes

Verify the specific ordering suffix and tape/reel configuration against the manufacturer's official documentation before procurement. Ensure that the requested variant matches the required electrical parameters and packaging format. Cross-reference the part number with the latest datasheet to confirm availability and compliance with current manufacturing standards.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required for high-speed switching. Consider the 50 V voltage rating and 100 mA current limit relative to the load requirements. Evaluate the thermal performance within the SOT-563-6 package constraints, ensuring the application stays within the 150 mW power dissipation limit and operating temperature range.

Part Context

The EMH3T2R belongs to ROHM's series of pre-biased digital transistors designed to replace discrete resistor-transistor networks. These components reduce board space and assembly costs by integrating passive biasing elements directly with the active semiconductor devices. This specific model provides a dual NPN solution suitable for applications requiring multiple switching elements in a single footprint.

Replacement Considerations

Consult official substitution guides for equivalent dual NPN pre-biased transistors in the SOT-563 package. Verify pinout compatibility and electrical parameter equivalence for any direct replacement.