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The EMH4FHAT2R is a dual digital transistor manufactured by ROHM Semiconductor, featuring two NPN transistors with built-in bias resistors in a SOT-563 (EMT6) surface-mount package. It is designed for automotive applications and holds AEC-Q101 qualification. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation of 150 mW. The device exhibits a DC current gain (hFE) ranging from 100 to 600 at 1 mA and 5 V, with a transition frequency (fT) of 250 MHz. It operates within a temperature range up to +150°C.
Verify the specific suffix T2R against the official datasheet to confirm packaging format. Confirm AEC-Q101 compliance status directly with the manufacturer or authorized distributors, as this qualification is critical for automotive integration. Ensure the component meets RoHS requirements for the intended market.
Select this component when a dual NPN digital transistor with integrated biasing is required in a compact SOT-563 package. Consider the 50 V voltage rating and 100 mA current capacity for appropriate load handling. Verify that the built-in resistor values align with the target logic interface levels before finalizing the design.
This part belongs to ROHM's series of digital transistors designed for space-saving and simplified biasing in electronic circuits. The EMH4FHAT2R specifically targets automotive reliability requirements, offering a robust solution for replacing discrete resistor-transistor combinations in modern vehicle electronics systems.
Check for direct pin-compatible substitutes within the same ROHM EMH series or equivalent parts from other manufacturers that meet AEC-Q101 standards. Ensure replacement components match the 50 V rating, 100 mA current limit, and SOT-563 footprint.