EMH4T2R

Overview

The EMH4T2R is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-563-6 surface-mount package. It integrates two NPN transistors with built-in bias resistors, each featuring a typical input resistance of 10 kOhms. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a minimum DC current gain (hfe) of 100 at 1 mA and 5 V, a maximum operating frequency of 250 MHz, and a power dissipation rating of 150 mW. The emitter-base voltage (VEBO) is rated at 5 V, and the component operates within a temperature range up to +150 C.

Feature Summary

• Integrates dual NPN transistors with built-in bias resistors for simplified circuit design
• Optimized for high-speed switching applications with a maximum operating frequency of 250 MHz
• Compact SOT-563-6 surface-mount package suitable for space-constrained designs

Applications

• General-purpose switching circuits
• Driver circuits for logic interfaces
• Level shifting applications

Procurement Notes

Verify the specific ordering suffix and tape-and-reel specifications against the official manufacturer datasheet before procurement. Confirm that the SOT-563-6 package dimensions align with the target PCB footprint. Ensure compliance with RoHS directives and check for any automotive or industrial qualification requirements if applicable to the end-use environment.

Selection Notes

Select this component when a dual NPN configuration with integrated base resistors is required to reduce external component count. The 10 kOhm input resistance offers a standard drive interface for most logic families. Consider the 150 mW power dissipation limit and thermal management needs for the SOT-563-6 package during high-duty-cycle operations.

Part Context

The EMH4T2R belongs to the EMH4 series of digital transistors from ROHM Semiconductor. This series is designed to replace multiple discrete components by combining transistors and biasing networks into a single compact package. The dual NPN configuration allows for efficient implementation of push-pull stages or independent switching functions within a minimal footprint.

Replacement Considerations

Cross-reference with other dual NPN digital transistors in the SOT-563-6 package from ROHM or other manufacturers. Verify pinout compatibility, specifically the arrangement of bases, collectors, emitters, and floating pins, as well as matching electrical parameters like VCEO and hfe.