EMH51T2R

EMH51T2R

$0.29
  • Description:NPN+NPN DIGITAL TRANSISTOR(WITH
  • Series:-

SKU:e08ce831adce Category: Brand:

  
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Product Detailed Parameters

  • Description:NPN+NPN DIGITAL TRANSISTOR(WITH
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMH51T2R

Overview

The ROHM Semiconductor EMH51T2R is a dual digital transistor featuring two NPN transistors with built-in bias resistors, housed in an SOT-563 (EMT6) surface-mount package. It operates with a maximum collector-emitter voltage of 150 mV and a continuous collector current of 100 mA per element. The device includes typical input resistors of 22 kOhms with a 1:1 ratio. Key electrical parameters include a minimum DC current gain (hFE) of 60 at 5 mA and 10 V, a maximum operating frequency of 250 MHz, and a power dissipation rating of 150 mW. The emitter-base voltage is rated at 3 V, with a saturation voltage of 50 mV.

Feature Summary

  • Integrates two NPN transistors with pre-biased resistors to simplify circuit design
  • Compact SOT-563 surface-mount package for space-constrained applications
  • High-speed operation suitable for frequencies up to 250 MHz

Applications

  • Digital logic interface circuits
  • Switching applications in portable devices
  • Level shifting between different voltage domains

Procurement Notes

Verify the specific ordering suffix and tape-and-reel quantity against the manufacturer's latest datasheet before procurement. Confirm RoHS compliance status and ensure the component meets the required temperature range specifications for the intended operational environment. Cross-reference the part number with authorized distributors to avoid counterfeit components.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required in a small footprint. Ensure the 150 mV collector-emitter voltage and 100 mA current limits align with the load requirements. Compare the 22 kOhm input resistance against other variants like EMH52T2R if different impedance matching is needed for the driving source.

Part Context

The EMH51T2R belongs to ROHM's series of dual digital transistors designed for high-density mounting. It serves as a compact alternative to discrete resistor-transistor networks, reducing board space and assembly complexity. The SOT-563 package allows for automated surface-mount processing, making it suitable for mass production in consumer electronics and industrial control systems.

Replacement Considerations

The EMX51T2R is a related dual NPN component but functions as a standard BJT without built-in resistors, requiring external biasing. For direct replacement with identical functionality, verify the input resistance value matches the 22 kOhm specification. Other variants in the EMH series offer different resistance values.

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