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The EMH60T2R is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-563 (EMT6) surface-mount package. It integrates two NPN transistors with built-in bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance (R1) of 2.2 kOhms and an emitter-base resistance (R2) of 47 kOhms, resulting in a resistor ratio of 21. It offers a minimum DC current gain (hFE) of 80 at 5 mA and 10 V, with a transition frequency of 250 MHz. Power dissipation is rated at 150 mW, and the maximum operating temperature reaches +150°C.
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status via official datasheets before integration. Ensure storage conditions adhere to specified limits to maintain reliability. Cross-reference ordering suffixes such as T2R for reel packaging specifications against current production data sheets.
Select this component when a dual NPN configuration with integrated biasing is required in a minimal footprint. The 2.2 kOhm base resistor suits moderate drive currents, while the 50 V rating supports standard low-voltage logic systems. Evaluate thermal constraints carefully due to the 150 mW power dissipation limit in the small SOT-563 package.
This part belongs to the EMH series of complex transistors from ROHM Semiconductor. These devices are designed to replace multiple discrete components, reducing board space and assembly costs. The EMH60 variant specifically targets applications requiring dual NPN functionality with defined bias ratios for consistent switching performance.
Direct substitutes within the same family include EMH61T2R, which shares the SOT-563 package but differs in internal resistor values. Verify pin compatibility and electrical ratings before substitution.