EMH61T2R

EMH61T2R

$0.32
  • Description:TRANS 2NPN PREBIAS 0.15W EMT6
  • Series:-

SKU:5ed66264d642 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):50mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMH61T2R

Overview

The EMH61T2R is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-563-6 surface-mount package. It integrates two transistors with built-in bias resistors, featuring a typical input resistance of 10 kOhms and a resistor ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 35 at 5 mA and 10 V, a maximum operating frequency of 250 MHz, and a power dissipation rating of 150 mW. The emitter-base voltage (VEBO) is specified at 2.6 V, with a saturation output voltage of 50 mV.

Feature Summary

  • Integrates dual NPN transistors with built-in bias resistors to reduce external component count.
  • Optimized for high-speed switching applications with a maximum operating frequency of 250 MHz.
  • Designed for compact surface-mount integration within the small SOT-563-6 footprint.

Applications

  • General-purpose signal switching and logic level translation circuits.
  • Driver stages for low-current loads in consumer electronics.
  • Interface circuits requiring integrated biasing for simplified PCB layout.

Procurement Notes

Verify the specific ordering suffix and tape-and-reel quantity against the manufacturer's latest documentation before procurement. Confirm RoHS compliance status and ensure the supplier provides valid traceability data. Cross-reference the part number with official ROHM Semiconductor databases to avoid counterfeit components and ensure compatibility with intended manufacturing processes.

Selection Notes

Select this component when a dual NPN configuration with fixed internal biasing is required for space-constrained designs. Ensure the 10 kOhm input resistance aligns with the driving source impedance. Verify that the 50 V voltage rating and 100 mA current capacity exceed the circuit's peak operational requirements. Consider the 150 mW power dissipation limit relative to the thermal environment of the final assembly.

Part Context

This component belongs to ROHM Semiconductor's series of Bias Resistor Built-in Transistors (BRBTs). These devices consolidate discrete transistor and resistor networks into single packages, facilitating miniaturization. The EMH61T2R specifically targets applications demanding reliable NPN switching with simplified bias networks, serving as a standard solution for general-purpose digital logic interfacing.

Replacement Considerations

Direct substitutes must match the SOT-563-6 package, dual NPN configuration, and similar electrical ratings. Verify equivalent input resistance values and voltage/current limits. Consult ROHM's official replacement guides or distributor cross-reference lists for confirmed compatible part numbers from other manufacturers.

EMH61T2REMH61T2R
$0.32
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