EMH6T2R

EMH6T2R

  • Description:TRANS 2NPN PREBIAS 0.15W EMT6
  • Series:-

SKU:9eff3cd23949 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMH6T2R

Overview

The EMH6T2R is a dual digital transistor manufactured by ROHM Semiconductor, featuring two NPN transistors integrated into a single SOT-563-6 surface-mount package. This Bias Resistor Built-in Transistor (BRBT) design incorporates typical input resistors of 2.2 kOhms with a resistor ratio of 21. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. It offers a minimum DC current gain (hfe) of 80 at 5 mA and 10 V, with a maximum operating frequency of 250 MHz. Power dissipation is rated at 150 mW, and the unit operates within a temperature range up to +150 C.

Feature Summary

  • Integrates two NPN transistors with built-in bias resistors in a compact SMD package
  • Eliminates external resistor requirements to simplify circuit layout and reduce component count
  • Provides high-speed switching capability suitable for frequencies up to 250 MHz

Applications

  • General-purpose switching circuits requiring compact dual-transistor solutions
  • Interface circuits between logic gates and load drivers
  • High-frequency signal processing applications

Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct pinout and electrical characteristics. Confirm RoHS compliance status through the latest datasheet or product compliance reports before integration. Check for any recent lifecycle changes or obsolescence notices directly from ROHM Semiconductor to avoid supply chain disruptions during production planning.

Selection Notes

Select this component when a dual NPN configuration with fixed internal biasing is required. The 2.2 kOhm input resistance suits applications needing moderate base drive currents. Ensure the 50 V voltage rating and 100 mA current capacity align with the target circuit loads. Compare the 150 mW power dissipation limit against thermal constraints in the final assembly environment.

Part Context

This part belongs to the EMH series of dual digital transistors from ROHM Semiconductor. These devices are designed to replace multiple discrete components, reducing board space and assembly costs. The SOT-563-6 package is standard for small-signal dual transistor applications in consumer electronics and industrial control systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's official replacement guide or cross-reference database for verified alternatives.

EMH6T2REMH6T2R

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