SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The EMH6T2R is a dual digital transistor manufactured by ROHM Semiconductor, featuring two NPN transistors integrated into a single SOT-563-6 surface-mount package. This Bias Resistor Built-in Transistor (BRBT) design incorporates typical input resistors of 2.2 kOhms with a resistor ratio of 21. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. It offers a minimum DC current gain (hfe) of 80 at 5 mA and 10 V, with a maximum operating frequency of 250 MHz. Power dissipation is rated at 150 mW, and the unit operates within a temperature range up to +150 C.
Verify the specific ordering code against the manufacturer's official documentation to ensure correct pinout and electrical characteristics. Confirm RoHS compliance status through the latest datasheet or product compliance reports before integration. Check for any recent lifecycle changes or obsolescence notices directly from ROHM Semiconductor to avoid supply chain disruptions during production planning.
Select this component when a dual NPN configuration with fixed internal biasing is required. The 2.2 kOhm input resistance suits applications needing moderate base drive currents. Ensure the 50 V voltage rating and 100 mA current capacity align with the target circuit loads. Compare the 150 mW power dissipation limit against thermal constraints in the final assembly environment.
This part belongs to the EMH series of dual digital transistors from ROHM Semiconductor. These devices are designed to replace multiple discrete components, reducing board space and assembly costs. The SOT-563-6 package is standard for small-signal dual transistor applications in consumer electronics and industrial control systems.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's official replacement guide or cross-reference database for verified alternatives.