EMH75T2R

EMH75T2R

$0.32
  • Description:TRANS 2NPN PREBIAS 0.15W EMT6
  • Series:-

SKU:8d9e2f66b2fa Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMH75T2R

Overview

The EMH75T2R is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-563 (EMT6) surface-mount package. It integrates two NPN transistors with built-in bias resistors, featuring typical base resistance of 4.7 kOhms and emitter-base resistance of 47 kOhms. Key electrical parameters include a collector-emitter breakdown voltage of 50V, continuous collector current of 100mA, and DC current gain (hFE) minimum of 80 at 5mA/10V. The device supports a transition frequency of 250MHz, maximum power dissipation of 150mW, and operates up to +150°C junction temperature.

Feature Summary

  • Integrates dual NPN transistors with pre-bias resistors in a compact SMD footprint
  • Optimized for high-speed switching applications with 250MHz transition frequency
  • Designed for low saturation voltage operation to minimize power loss

Applications

  • General-purpose signal switching and level shifting circuits
  • Driver stages for small-signal loads and logic interfaces
  • High-frequency switching applications requiring compact form factor

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and internal resistor values. Ensure the component meets RoHS3 compliance requirements for the target assembly process. Confirm that the SOT-563 package dimensions align with the PCB land pattern specifications before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to reduce external component count. The 4.7kOhm base resistor value suits standard logic interface applications. Consider the 50V rating and 100mA current limit to ensure adequate headroom for the intended load conditions and operating environment.

Part Context

This part belongs to the ROHM EMH series of Bias Resistor Built-in Transistors (BRBTs). These devices are designed to replace discrete resistor-transistor networks, simplifying circuit design and saving board space. The EMH75 variant specifically denotes the dual NPN configuration with 4.7kOhm base resistance.

Replacement Considerations

Cross-reference with other ROHM dual NPN digital transistors such as EMH51T2R or EMH52T2R if different base resistance values are needed. Verify pinout compatibility with SOT-563 packages from other manufacturers before substitution.

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