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The EMH9FHAT2R is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-563-6 surface-mount package. It features built-in bias resistors with a typical input resistance of 10 kOhms and a resistor ratio of 4.7. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 68 and a power dissipation rating of 150 mW. It operates at a maximum temperature of +150°C and holds AEC-Q101 qualification for automotive applications.
Verify the specific ordering code against the manufacturer's latest documentation to ensure compatibility with design requirements. Confirm that the NRND status does not impact long-term supply chain stability for production runs. Check RoHS compliance details directly from the official datasheet before finalizing procurement specifications.
Select this component when a dual NPN configuration with integrated base resistors is required for space-constrained designs. Ensure the 10 kOhm input resistance aligns with the driving circuit's output impedance. Verify that the 50 V voltage rating and 100 mA current capacity meet the load requirements of the target application circuit.
This part belongs to ROHM's series of complex digital transistors designed to simplify circuit design by combining transistors and resistors. The EMH9FHA variant specifically targets applications needing dual NPN functionality with moderate gain characteristics. It serves as a replacement for discrete transistor-resistor networks in signal processing and switching roles.
Check for direct substitutes within the same ROHM family or equivalent parts from other manufacturers offering identical pinouts and electrical ratings. Ensure any replacement maintains AEC-Q101 qualification if used in automotive contexts.