EMH9T2R

EMH9T2R

$0.59
  • Description:TRANS 2NPN PREBIAS 0.15W EMT6
  • Series:-

SKU:93aa989513f7 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMH9T2R

Overview

The EMH9T2R is a dual NPN pre-biased transistor manufactured by ROHM Semiconductor, housed in an EMT6 (SOT-563) surface-mount package. It integrates two NPN transistors with built-in bias resistors: R1 is 10 kOhms and R2 is 47 kOhms. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (Ic) of 100 mA, and a transition frequency (fT) of 250 MHz. The device features a minimum DC current gain (hFE) of 68 at Ic=5mA and Vce=5V, with a maximum saturation voltage (VCEsat) of 300 mV under specified conditions. Power dissipation is rated at 150 mW, and the maximum operating temperature reaches +150°C.

Feature Summary

  • Integrates dual NPN transistors with fixed internal bias resistors to simplify circuit design.
  • Optimized for high-speed switching applications with a 250 MHz transition frequency.
  • Designed for low-voltage logic interfacing with defined saturation characteristics.

Applications

  • General-purpose switching circuits in consumer electronics.
  • Driver stages for small-signal loads in portable devices.
  • Logic level translation interfaces requiring compact footprint solutions.

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer confirmation. Ensure the ordering suffix matches the required packaging format, such as cut tape or reel, as indicated on official datasheets. Cross-reference the specific part marking against the manufacturer's identification guide to confirm the batch and date code align with project requirements before finalizing procurement.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required in a minimal SOT-563 footprint. Confirm that the 50V voltage rating and 100mA current capacity meet the load specifications. Verify that the 10k/47k resistor ratio suits the driving source impedance and desired base current levels for the intended application logic family.

Part Context

This device belongs to the EMH9 series of digital transistors from ROHM Semiconductor. It is specifically designed as a dual NPN unit within the EMT6 package family, offering a space-saving alternative to discrete transistor and resistor networks. The series targets applications demanding reliable switching performance in compact electronic assemblies.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternatives based on matching pinout compatibility, electrical ratings, and package dimensions only after verifying specific cross-reference data from official manufacturer sources.

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