EMT18T2R

Overview

The EMT18T2R is a dual PNP bipolar junction transistor manufactured by ROHM Semiconductor. It integrates two independent PNP transistors within a compact SOT-563-6 surface-mount package. The device supports a maximum collector-emitter voltage of 12 V and a continuous collector current of -500 mA per element. Key electrical characteristics include a DC current gain (hFE) ranging from 270 to 680 at -10 mA, a transition frequency of 260 MHz, and a maximum power dissipation of 150 mW. The unit operates at temperatures up to +150°C and utilizes silicon technology for standard general-purpose applications.

Feature Summary

• Dual configuration integrating two independent PNP elements in a single package
• High DC current gain suitable for signal amplification
• Compact SOT-563-6 footprint for space-constrained designs

Applications

• General purpose small signal amplification
• Switching circuits requiring dual PNP control
• Audio pre-amplifier stages

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging format. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into the assembly process. Cross-reference the part number with official distributor catalogs to validate current availability and lead times.

Selection Notes

Select this component when a dual PNP configuration is required in a minimal footprint. Ensure the 12 V collector-emitter voltage rating exceeds the circuit's peak operating voltage. Verify that the 150 mW power dissipation limit accommodates the thermal conditions of the final application without exceeding the +150°C maximum junction temperature.

Part Context

This component belongs to the EMT18 series of dual transistors from ROHM Semiconductor. It serves as a compact alternative to discrete single transistors, reducing board space and assembly complexity. The series is designed for general-purpose electronics where high gain and moderate speed are necessary.

Replacement Considerations

Direct substitutes may include other dual PNP transistors in SOT-563 packages with similar voltage and current ratings. Verify pinout compatibility and electrical parameters such as hFE and VCEO before substitution.