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The EMT1DXV6T5G is a dual general-purpose PNP transistor housed in an SOT-563 package designed for low-power surface-mount applications. It features a collector-emitter voltage of -60 V and a continuous collector current of -100 mA. The device exhibits a maximum collector-emitter saturation voltage of -0.5 V at specified test conditions. Electrical characteristics include a DC current gain ranging from 120 to 560, a transition frequency of 140 MHz, and an output capacitance of 3.5 pF. Thermal resistance from junction-to-ambient is 350 °C/W for one heated junction and 250 °C/W for both heated junctions.
Verify the specific ordering suffix carefully when sourcing this component. The datasheet indicates that the EMT1DXV6T5G variant is officially discontinued as of July 2025. Procurement should focus on active equivalents or confirm availability through authorized representatives before finalizing orders.
Select this component for low-power general-purpose amplification where space constraints require an SOT-563 footprint. Ensure the application operates within the -60 V collector-emitter voltage limit and -100 mA continuous current rating. Consider thermal derating if ambient temperatures exceed 25 °C.
This part belongs to the EMT1DXV6 series of dual PNP transistors manufactured by onsemi. The series includes variants such as EMT1DXV6T1G and NSV prefixes for automotive-grade requirements. The EMT1DXV6T5G specifically denotes the tape and reel packaging format.
The EMT1DXV6T5G is listed as discontinued. Consult onsemi representatives for current information or potential replacement parts. Verify pinout compatibility and electrical parameters against alternative dual PNP transistors in the SOT-563 package.