EMX18T2R

Overview

The EMX18T2R is a dual NPN bipolar junction transistor (BJT) manufactured by ROHM Semiconductor. It is housed in an SOT-563-6 surface-mount package and utilizes silicon technology. The device features a collector-emitter maximum voltage (VCEO) of 12 V, a collector-base voltage (VCBO) of 15 V, and an emitter-base voltage (VEBO) of 6 V. It supports a continuous collector current of 500 mA with a power dissipation rating of 150 mW. Key electrical characteristics include a DC current gain (hFE) ranging from 270 to 680 at -10 mA and -2 V, a saturation voltage of 250 mV, and a gain-bandwidth product (fT) of 260 MHz. The component operates within a temperature range up to +150°C.

Feature Summary

• Dual NPN configuration integrated into a compact SOT-563-6 surface-mount package for space-efficient circuit design.
• High DC current gain capability supporting efficient signal amplification and switching operations.
• Robust thermal performance with a maximum operating temperature of +150°C for reliable operation in demanding environments.

Applications

• General-purpose signal amplification in consumer electronics
• Switching applications in portable devices
• Interface circuits requiring dual NPN configurations

Procurement Notes

Verify the specific ordering suffix and packaging type when sourcing, as availability may vary between cut tape, reel, or MouseReel formats. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure that the procurement channel provides valid traceability for the silicon-based component to maintain quality standards in production.

Selection Notes

Select this component when a dual NPN BJT with 12 V VCEO and 500 mA continuous current is required in a small footprint. Consider the 260 MHz transition frequency for moderate-speed switching or amplification tasks. Evaluate the 150 mW power dissipation limit against thermal management constraints in the target application environment.

Part Context

The EMX18T2R belongs to the EMT18 series of dual transistors from ROHM Semiconductor. This series offers various polarity combinations, including PNP/PNP and NPN/NPN options, all sharing similar compact packaging standards. The part is designed for general-purpose electronic applications where space-saving dual transistor solutions are preferred over discrete single components.

Replacement Considerations

Publicly confirmed substitute part numbers for the EMX18T2R were not identified in the provided source material. Verify compatibility with alternative dual NPN transistors in the SOT-563 package by cross-referencing electrical parameters such as VCEO, IC, and hFE with official datasheets.