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Product Detailed Parameters
- Description：TRANS ARR 2NPN 50V 100MA SOT563
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The EMX1DXV6T5G is a dual NPN bipolar junction transistor (BJT) array manufactured by onsemi. It features a maximum DC collector current of 100 mA and a collector-emitter voltage (VCEO) of 50 V, with a collector-base voltage (VCBO) of 60 V. The device operates within a temperature range of -55°C to +150°C TJ. Key electrical parameters include a transition frequency (fT) of 180 MHz, a minimum DC current gain (hFE) of 120 at 1 mA and 6 V, and a power dissipation rating of 357 mW. It is housed in an SOT-563-6 surface-mount package.
Feature Summary
- Dual NPN configuration integrated into a single compact SMD package for space-constrained designs.
- High thermal stability supporting operation up to 150°C junction temperature.
- Integrated base resistors simplify biasing networks in digital switching applications.
Applications
- General-purpose digital switching circuits
- Signal amplification stages
- Logic interface buffers
Procurement Notes
Verify the suffix 'G' indicates RoHS compliance. Confirm availability status as the non-G version may be obsolete. Ensure the specific reel or cut-tape packaging matches production requirements. Validate that the SOT-563 footprint aligns with the target PCB design before ordering.
Selection Notes
Select this component when a dual NPN solution is required in a minimal footprint. Compare fT and hFE specifications against circuit speed and gain requirements. Ensure the 50V VCEO rating exceeds the maximum operating voltage. Verify thermal management capabilities for the intended power dissipation levels.
Part Context
This part belongs to the EMX1 series of dual BJT arrays from onsemi. It serves as a modern, lead-free replacement for older non-compliant variants like the EMX1DXV6T1. The SOT-563 package allows for automated assembly and reduced board space compared to discrete components.
Replacement Considerations
The EMX1DXV6T1G is a direct functional equivalent with RoHS compliance. Other dual NPN transistors in SOT-563 packages may serve as alternatives if pinouts and electrical ratings match exactly.
FAQ
What is the difference between EMX1DXV6T5G and EMX1DXV6T1?
The EMX1DXV6T1G is the RoHS-compliant version of the obsolete EMX1DXV6T1. They share identical electrical characteristics and pinouts.
What is the typical input resistance for this device?
The datasheet specifies typical internal base resistors, but exact values depend on the specific variant within the EMX1 family. Consult the official datasheet for precise resistor values.
Is this component suitable for high-frequency applications?
With a transition frequency (fT) of 180 MHz, it is suitable for moderate-speed digital switching and small-signal amplification, but not for RF applications.
