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The EMX2T2R is a dual NPN complex transistor manufactured by ROHM Semiconductor, housed in an SOT-563 (EMT6) surface-mount package. It integrates two NPN bipolar junction transistors with a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 150 mA per device. The component features a DC current gain (hFE) ranging from 120 to 560 at specified test conditions. It operates within a storage temperature range of -55°C to 150°C and utilizes tape-and-reel packaging for automated assembly.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and quantity specifications. Confirm that the component status aligns with design requirements, as availability may vary based on production lifecycle stages. Cross-reference the datasheet revision date to ensure compatibility with current design standards.
Select this component when a dual NPN configuration is required in a minimal footprint. Ensure the circuit design accommodates the 50 V voltage rating and 150 mA current limit. Verify thermal management capabilities given the small SOT-563 package size and power dissipation characteristics under expected operating loads.
This part belongs to ROHM's complex transistor lineup, designed to replace discrete dual-transistor solutions. It simplifies PCB layout by consolidating two NPN devices into one package. The EMT6 package code corresponds to the standard SOT-563 form factor widely used in consumer and industrial electronics.
The EMX1T2R is documented as a similar level replacement with identical package dimensions and specifications. Verify pinout compatibility and electrical parameters before substitution.