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Product Detailed Parameters
- Description：TRANS 2NPN DUAL 20V 50MA EMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：50mA
- Voltage - Collector Emitter Breakdown (Max)：20V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 4mA, 20mA
- Current - Collector Cutoff (Max)：500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：56 @ 10mA, 10V
- Power - Max：150mW
- Frequency - Transition：1.5GHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：EMT6
- Grade：-
- Qualification：-
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Overview
The EMX4T2R is a dual NPN bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor. It is housed in an SOT-563-6 surface-mount package and operates with a maximum collector-emitter voltage of 20 V and a collector-base voltage of 30 V. The device supports a continuous collector current of 50 mA and features a power dissipation rating of 150 mW. Key electrical characteristics include a gain-bandwidth product (fT) of 1.5 GHz, an emitter-base voltage of 3 V, and a collector-emitter saturation voltage of 500 mV. DC current gain ranges from a minimum of 56 to a maximum of 180 at specified test conditions.
Feature Summary
- Dual NPN configuration integrated into a compact six-terminal surface-mount package for space-constrained designs.
- High-speed switching capability supported by a 1.5 GHz gain-bandwidth product suitable for RF applications.
- Robust thermal performance allowing operation up to +150°C with low power dissipation requirements.
Applications
- RF signal processing circuits requiring high-frequency response
- General-purpose switching applications in consumer electronics
- Driver stages in portable communication devices
Procurement Notes
Verify the specific ordering suffix and tape-and-reel quantity against the manufacturer's latest documentation before procurement. Confirm RoHS compliance status and ensure the component meets environmental regulations for the target market. Check for any obsolescence notices or lifecycle changes that may affect long-term supply availability.
Selection Notes
Select this component when a dual NPN BJT array with high-frequency performance is required in a small footprint. Ensure the design voltage does not exceed the 20 V collector-emitter limit. Consider the 1.5 GHz fT for speed requirements and verify that the 50 mA current rating aligns with load demands.
Part Context
The EMX4T2R belongs to the EMX4 series of dual bipolar transistors from ROHM Semiconductor. This series is designed for general-purpose and RF applications, offering a balance of speed and current handling in a standard SOT-563 package. It serves as a compact alternative to discrete dual-transistor solutions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's datasheet for recommended equivalents or cross-reference guides if replacement is necessary.
FAQ
What is the maximum operating temperature for the EMX4T2R?
The maximum operating temperature for the EMX4T2R is +150°C.
Is the EMX4T2R suitable for new designs?
According to available data, the EMX4T2R is marked as 'End of Life' and is being phased out by the manufacturer.
What is the gain-bandwidth product of the EMX4T2R?
The gain-bandwidth product (fT) of the EMX4T2R is 1.5 GHz.
