EMX51T2R

Overview

The EMX51T2R is a dual NPN bipolar junction transistor (BJT) array manufactured by Rohm Semiconductor. It features a collector-emitter voltage (VCEO) of 20 V and a continuous collector current (IC) of 200 mA. The device has a power dissipation rating of 150 mW and a transition frequency (fT) of 400 MHz. DC current gain (hFE) ranges from 120 to 560 at 1 mA and 2 V. It operates within a junction temperature range up to +150°C and is housed in an SOT-563 (EMT6) surface-mount package.

Feature Summary

• Dual NPN configuration for space-saving circuit design
• High-speed operation with 400 MHz transition frequency
• Integrated bias resistor options available in related series

Applications

• General-purpose small signal amplification
• Switching applications in consumer electronics
• Signal processing circuits requiring dual transistors

Procurement Notes

Verify the specific suffix 'T2R' indicates tape-and-reel packaging when ordering. Confirm RoHS compliance status through official datasheets or manufacturer declarations prior to procurement. Ensure compatibility with automated placement equipment specifications for the EMT6 package type.

Selection Notes

Select this component for designs requiring dual NPN transistors with moderate current handling capabilities. Compare against single-transistor alternatives if board space permits, as arrays reduce footprint. Verify thermal management requirements given the 150 mW power dissipation limit in the compact SOT-563 package.

Part Context

This part belongs to Rohm's general-purpose BJT array family. It shares the EMT6 package form factor with other variants like EMX5T2R but differs in electrical ratings such as voltage and current capacity. The '51' designation typically denotes specific performance characteristics within the series.

Replacement Considerations

EMX5T2R is listed as a similar alternative by distributors, though it has different electrical ratings (11V, 50mA). Direct pin-compatible substitutes should be verified against the official datasheet parameters for voltage, current, and gain.