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The EMX52T2R is a dual NPN complex transistor manufactured by ROHM Semiconductor, housed in an SOT-563 (EMT6) surface-mount package. It features a collector-emitter voltage of 50V and a continuous collector current of 100mA per element. The device offers a DC current gain range of 120 to 560 at 1mA and 2V. Maximum power dissipation is rated at 150mW, with a maximum operating junction temperature of +150°C. The component utilizes silicon technology and is supplied in tape-and-reel packaging.
Verify the specific ordering suffix and package variant against the official datasheet before procurement. Confirm RoHS compliance status and supply availability directly with authorized distributors or the manufacturer. Ensure the selected component matches the required electrical specifications for the target design application.
Select this component for designs requiring dual NPN transistors in a minimal footprint. Verify that the 50V collector-emitter voltage and 100mA current ratings exceed circuit requirements. Consider the 150mW power dissipation limit when designing thermal management solutions for dense PCB layouts.
This part belongs to the EMX series of complex transistors from ROHM Semiconductor. It serves as a replacement for legacy parts like the VT6X2, offering similar electrical characteristics in a modern SOT-563 package. The series is designed for space-constrained applications requiring multiple discrete transistors in a single component.
The EMX52T2R is listed as a direct replacement for the VT6X2. Both components share identical polarity, voltage ratings, and current capabilities. Designers should verify pinout compatibility and package dimensions when transitioning between these specific part numbers.