EMY1T2R

Overview

The EMY1T2R is a dual bipolar junction transistor (BJT) manufactured by ROHM Semiconductor, featuring an NPN and PNP configuration within a single SOT-553-5 surface-mount package. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 150 mA. The device exhibits a power dissipation rating of 150 mW and supports a maximum operating temperature of +150°C. DC current gain ranges from 120 to 560 at 1 mA. Transition frequencies are specified at 140 MHz for the NPN element and 180 MHz for the PNP element. Saturation voltages are limited to 400 mV and 500 mV respectively.

Feature Summary

• Integrates independent NPN and PNP transistor elements in a compact footprint to reduce mounting area.

Applications

• General-purpose small signal amplification circuits
• Switching applications requiring complementary polarity control

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official datasheets. Ensure storage conditions remain within specified limits to prevent moisture damage prior to soldering. Validate package integrity against shipping specifications.

Selection Notes

Select this component when space-constrained designs require complementary NPN/PNP pairs. Verify thermal management capabilities align with the 150 mW dissipation limit. Confirm interface requirements match the SOT-553-5 pinout configuration for PCB layout compatibility.

Part Context

This part belongs to the EMY1 series of dual transistors designed for general-purpose use. It serves as a compact alternative to discrete transistor arrangements, facilitating simplified circuit board layouts while maintaining standard bipolar performance characteristics for signal processing tasks.

Replacement Considerations

VT6Z2T2R is listed as a recommended alternative. Verify electrical parameter alignment and pin compatibility before substitution.