EMZ1DXV6T5

EMZ1DXV6T5

$0.04
  • Description:TRANS NPN/PNP 60V 100MA SOT-563
  • Series:-

SKU:39a3b0aec9e7 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP 60V 100MA SOT-563
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
  • Power - Max:500mW
  • Frequency - Transition:180MHz, 140MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

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EMZ1DXV6T5

Overview

The EMZ1DXV6T5 is a dual bipolar junction transistor (BJT) array manufactured by onsemi, housed in an SOT-563 surface-mount package. It integrates one NPN and one PNP transistor within a single compact footprint. The device supports a maximum collector-emitter voltage of 60V and a continuous collector current of 100mA. Key electrical characteristics include a DC current gain (hFE) of at least 120 at 1mA and 6V, with transition frequencies of 180MHz for the NPN and 140MHz for the PNP element. Power dissipation is rated at 500mW, and it operates across a temperature range of -55°C to 150°C.

Feature Summary

  • Dual configuration combining NPN and PNP transistors in a single package
  • High-speed operation with transition frequencies up to 180MHz
  • Compact SOT-563 surface-mount design for space-constrained applications

Applications

  • General-purpose switching circuits
  • Signal conditioning and amplification stages
  • Logic interface and level shifting

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm lot traceability and RoHS compliance status prior to integration. Note that this specific part number may be obsolete; validate current availability and lifecycle status with the supplier before finalizing procurement plans.

Selection Notes

Select this component when a matched NPN/PNP pair is required in a minimal footprint. Ensure the 60V voltage rating and 100mA current limit meet circuit demands. Consider the SOT-563 thermal performance for power dissipation requirements. Verify compatibility with existing PCB land patterns designed for this specific package outline.

Part Context

This device belongs to onsemi's portfolio of small-signal BJT arrays. It serves as a compact alternative to discrete transistor implementations, reducing board space and assembly complexity. The dual configuration is typical for push-pull stages or differential pairs where matching characteristics are beneficial.

Replacement Considerations

Check for pin-compatible alternatives from onsemi or other manufacturers offering similar NPN/PNP configurations in SOT-563 packages. Verify electrical parameter equivalence, particularly Vceo, Ic, and hFE, to ensure functional compatibility without redesign.

EMZ1DXV6T5EMZ1DXV6T5
$0.04
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