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The EMZ1DXV6T5 is a dual bipolar junction transistor (BJT) array manufactured by onsemi, housed in an SOT-563 surface-mount package. It integrates one NPN and one PNP transistor within a single compact footprint. The device supports a maximum collector-emitter voltage of 60V and a continuous collector current of 100mA. Key electrical characteristics include a DC current gain (hFE) of at least 120 at 1mA and 6V, with transition frequencies of 180MHz for the NPN and 140MHz for the PNP element. Power dissipation is rated at 500mW, and it operates across a temperature range of -55°C to 150°C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm lot traceability and RoHS compliance status prior to integration. Note that this specific part number may be obsolete; validate current availability and lifecycle status with the supplier before finalizing procurement plans.
Select this component when a matched NPN/PNP pair is required in a minimal footprint. Ensure the 60V voltage rating and 100mA current limit meet circuit demands. Consider the SOT-563 thermal performance for power dissipation requirements. Verify compatibility with existing PCB land patterns designed for this specific package outline.
This device belongs to onsemi's portfolio of small-signal BJT arrays. It serves as a compact alternative to discrete transistor implementations, reducing board space and assembly complexity. The dual configuration is typical for push-pull stages or differential pairs where matching characteristics are beneficial.
Check for pin-compatible alternatives from onsemi or other manufacturers offering similar NPN/PNP configurations in SOT-563 packages. Verify electrical parameter equivalence, particularly Vceo, Ic, and hFE, to ensure functional compatibility without redesign.