EMZ1T2R

Overview

The EMZ1T2R is a dual bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor, featuring one NPN and one PNP transistor in an EMT6 surface-mount package. It supports a collector-emitter voltage of 50 V and a continuous collector current of 150 mA. The device offers a power dissipation of 150 mW, with transition frequencies of 180 MHz for the NPN and 140 MHz for the PNP element. DC current gain ranges from 120 to 560 at 1 mA and 6 V, while saturation voltages are specified at 300 mV under defined load conditions.

Feature Summary

• Integrates complementary NPN and PNP transistors into a single compact surface-mount package for space-efficient circuit design.
• Provides high-speed switching capabilities with transition frequencies up to 180 MHz for the NPN component.
• Features integrated base resistors to simplify drive circuitry and reduce external component count.

Applications

• General-purpose switching applications in consumer electronics
• Driver circuits for low-power loads
• Logic interface and level shifting

Procurement Notes

Verify the specific datasheet version and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the EMT6 package dimensions and pinout align with the target PCB footprint. Ensure thermal management strategies account for the 150 mW power dissipation limit under expected operating conditions.

Selection Notes

Select this component when a matched NPN/PNP pair is required for push-pull or differential configurations. Consider the 50 V voltage rating and 150 mA current capacity relative to load requirements. Evaluate the 180 MHz frequency response against signal speed needs. Compare alternative packages if board space constraints differ from the EMT6 form factor.

Part Context

This part belongs to the EMZ1 series of dual BJT arrays from ROHM Semiconductor. It serves as a direct replacement for the VT6Z1 complex transistor, sharing similar electrical specifications but utilizing the EMT6 package instead of the VMT6 configuration. The series is designed for general-purpose digital and analog switching tasks.

Replacement Considerations

The VT6Z1T2R is a confirmed substitute part number with identical electrical specifications. Verify package compatibility between EMT6 and VMT6 footprints during substitution planning.

FAQ

What is the maximum collector-emitter voltage for the EMZ1T2R?

The maximum collector-emitter voltage (VCEO) is 50 V.

Does the EMZ1T2R include internal resistors?

Yes, it is a digital transistor array with integrated base resistors to facilitate direct logic interfacing.