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The EMZ51T2R is a dual digital transistor manufactured by ROHM Semiconductor, featuring two NPN transistors with built-in bias resistors. It is housed in an SOT-563 (EMT6) surface-mount package. The device supports a collector-emitter voltage of 20 V and a continuous collector current of 200 mA. Key electrical parameters include a typical input resistance of 22 kOhms, a minimum DC current gain (hFE) of 120 at 1 mA, and a transition frequency of 400 MHz. Power dissipation is rated at 150 mW, with a maximum operating temperature of +150°C.
Verify the exact ordering suffix and tape/reel specifications against the official ROHM datasheet before procurement. Confirm that the component meets RoHS compliance requirements for your specific manufacturing process. Ensure storage conditions adhere to moisture sensitivity level guidelines to prevent package damage during assembly.
Select this component when a dual NPN configuration with integrated biasing is required. Compare the 200 mA current rating and 400 MHz frequency against alternative models like the EMX51T2R if higher current or different gain characteristics are needed. Ensure the SOT-563 footprint matches the target PCB layout constraints.
This part belongs to ROHM's series of Bias Resistor Built-in Transistors (BRBTs). These devices combine transistors and resistors to reduce board space and assembly costs. The EMZ51T2R specifically offers a balance of moderate voltage handling and high current capacity within a standard small-outline transistor package.
The VT6Z1 is listed as a similar specification part number with comparable NPN/PNP configurations in the same package family. Verify pinout compatibility and electrical parameter overlaps before substitution.