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The ROHM Semiconductor EMZ7T2R is a dual bipolar junction transistor (BJT) complex component housed in an SOT-563-6 surface-mount package. It integrates one NPN and one PNP transistor within a single compact footprint, measuring 1.6x1.6 mm with a thickness of 0.55 mm. The device supports a maximum collector-emitter voltage (VCEO) of 12 V for the NPN side and -12 V for the PNP side, with continuous collector currents of 0.5 A and -0.5 A respectively. Key electrical parameters include a collector-emitter saturation voltage of 90 mV to 100 mV, a power dissipation rating of 150 mW, and gain-bandwidth products (fT) of 320 MHz for the NPN and 260 MHz for the PNP section.
Verify the specific ordering suffix and tape-and-reel quantity against the manufacturer's latest datasheet before finalizing orders. Confirm RoHS compliance status and JEITA package code alignment with design requirements. Ensure that the minimum packing quantity constraints are accounted for in procurement planning to avoid excess inventory or fulfillment delays.
Select this component when a matched NPN/PNP pair is required in a minimal footprint. Compare the 12 V breakdown voltage and 150 mW thermal limits against circuit demands. Consider the SOT-563-6 pinout compatibility if replacing existing discrete pairs or similar complex transistors like the EMZ7 series variants.
The EMZ7T2R belongs to ROHM's EMZ series of complex transistors, which combine two bipolar junctions in a single package. This series is designed to reduce board space and simplify assembly compared to using separate discrete NPN and PNP transistors. The T2R suffix indicates the taping packaging format used for automated surface-mount placement.
The VT6Z1 is listed as a similar specification replacement option. Verify pinout compatibility and ensure the alternative meets the 12 V voltage and 0.5 A current requirements of the original design.