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Product Detailed Parameters
- Description：GANFET N-CH 40V 33A DIE OUTLINE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：33A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：4mOhm @ 33A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs：11.6 nC @ 5 V
- Vgs (Max)：+6V, -5V
- Input Capacitance (Ciss) (Max) @ Vds：1200 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2015 is an enhancement-mode gallium nitride (GaN) power transistor manufactured by Efficient Power Conversion. It utilizes eGaN technology to provide high-efficiency switching capabilities with zero reverse recovery charge, distinguishing it from traditional silicon MOSFETs. The device is designed for applications requiring fast switching speeds and high power density.
Feature Summary
- Enhancement-mode operation eliminates the need for negative gate-off voltages
- Zero reverse recovery charge enables higher efficiency in synchronous rectification
- Ultra-low gate charge reduces driver losses and simplifies drive circuitry
Applications
- High-frequency DC-DC converters
- AC-DC chargers and adapters
- Class-D audio amplifiers
Procurement Notes
Verify the specific suffix code on the component marking against the official EPC datasheet to confirm exact electrical parameters and package variant. Ensure the supplier provides traceability documentation consistent with EPC manufacturing standards. Confirm RoHS compliance status if required for your specific application regulations.
Selection Notes
Select this component when designing circuits that benefit from GaN's superior switching speed compared to silicon. Consider the thermal management requirements of the QFN package. Evaluate the gate drive voltage compatibility, as the device typically operates with a standard 5V logic level interface without requiring negative bias.
Part Context
EPC2015 belongs to the eGaN FET family, representing a shift from silicon-based power switches. It shares architectural similarities with other EPC enhancement-mode transistors but offers specific performance characteristics tailored for modern power conversion topologies. It serves as a direct replacement candidate for silicon MOSFETs in high-frequency designs.
Replacement Considerations
Direct pin-compatible replacements may include other EPC eGaN FETs such as the EPC2014C or EPC2016C, provided their voltage and current ratings meet the design requirements. Verify layout parasitic sensitivity, as GaN devices are more susceptible to ringing than silicon counterparts.
