EPC2018

Description：GANFET N-CH 150V 12A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR)

SKU:5d8114ce5ba2 Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：GANFET N-CH 150V 12A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：25mOhm @ 6A, 5V
Vgs(th) (Max) @ Id：2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs：7.5 nC @ 5 V
Vgs (Max)：+6V, -5V
Input Capacitance (Ciss) (Max) @ Vds：540 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 125°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2018

Overview

The EPC2018 is an enhancement mode Gallium Nitride (GaN) power transistor die manufactured by Efficient Power Conversion (EPC). It features a vertical current flow architecture designed for high-efficiency power conversion. Key electrical specifications include a drain-source voltage (VDS) rating of 150 V and a continuous drain current (ID) of 12 A at the case temperature. The device exhibits a maximum on-resistance (RDS(on)) of 25 mΩ. Additional parameters include a maximum gate charge of 7.5 nC at 5 V and a maximum input capacitance of 540 pF at 100 V. The component is RoHS 6/6 compliant and halogen-free.

Feature Summary

Utilizes eGaN FET technology to achieve faster switching frequencies with lower switching losses and reduced drive power requirements.
Delivers higher efficiency through minimized conduction and switching losses, while eliminating reverse recovery losses inherent in silicon MOSFETs.
Features a compact die size that enables smaller footprint designs and higher power density in power supply applications.

Applications

High-frequency DC-DC converters
Point-of-load (POL) regulation modules
Class-D audio amplifiers

Procurement Notes

Verify the specific revision status and lot traceability upon order confirmation. Confirm that the procurement channel provides authentic components from Efficient Power Conversion or authorized distributors. Ensure handling procedures account for the bare die format, requiring appropriate substrate mounting and wire bonding capabilities during assembly. Check for any specific storage conditions required to maintain device integrity prior to use.

Selection Notes

Select the EPC2018 when designing circuits requiring 150 V blocking capability with low on-resistance for improved thermal performance. Consider this component for applications prioritizing high switching speeds to reduce passive component sizes. Evaluate the bare die form factor against available packaging options if surface-mount convenience is required. Compare total system efficiency gains against potential driver complexity associated with GaN devices.

Part Context

The EPC2018 belongs to the eGaN FET family from Efficient Power Conversion, representing a shift from traditional silicon MOSFETs to wide-bandgap semiconductor technology. This series leverages lateral and vertical current flow structures to overcome silicon limitations. The EPC2018 specifically targets applications demanding high power density and efficiency, serving as a core active switch in modern power electronics architectures.

Replacement Considerations

Official documentation indicates the EPC2018 is discontinued. Designers should consult EPC for qualified alternative part numbers within the current portfolio that match the 150 V, 12 A, and 25 mΩ specifications. Verify pinout compatibility and thermal characteristics before substituting.