EPC2112ENGRT

Full Half-Bridge (H Bridge) Drivers Overview

The EPC2112ENGRT is a low-side driver IC utilizing eGaN FET technology, designed for DC-DC converter applications. It features a single channel with an output current of 10A and a peak output current of 40A. The device operates with a supply voltage range of 4.5V to 5.5V and supports load voltages up to 160V maximum. It employs an On/Off interface for inductive loads and has a typical on-resistance of 32 milliohms. The component is housed in a 10-VFBGA package (2.9x1.1mm) and functions within a junction temperature range of -40°C to 150°C.

Full Half-Bridge (H Bridge) Drivers Feature Summary

• Integrates eGaN FET technology for high-efficiency power switching
• Configured as a low-side driver for inductive load control
• Supports high voltage loads up to 160V maximum
• Utilizes a simple On/Off interface for drive signals

Full Half-Bridge (H Bridge) Drivers Applications

• DC-DC Converters

Full Half-Bridge (H Bridge) Drivers Procurement Notes

Verify the specific ordering suffix 'TR' indicates tape and reel packaging configuration. Confirm the part status is discontinued as per manufacturer records dated December 11, 2021. Ensure compatibility with existing PCB footprints for the 10-BGA (2.9x1.1) package. Check RoHS3 compliance requirements against project specifications. Validate that the 10A continuous current rating meets thermal management constraints in the final assembly.

Full Half-Bridge (H Bridge) Drivers Selection Notes

Select this component when a low-side GaN driver is required for high-voltage inductive loads. The 160V breakdown voltage allows for use in higher voltage bus architectures compared to standard silicon MOSFET drivers. The small 10-BGA footprint suits space-constrained designs. Consider the discontinued status for long-term production viability. The 32mOhm on-resistance impacts conduction losses at the specified 10A output current.

Full Half-Bridge (H Bridge) Drivers Part Context

This part belongs to the EPC2112 family of eGaN integrated circuits. It serves as a dedicated gate driver combining control logic with the power switch. The technology leverages Gallium Nitride for faster switching speeds and reduced size compared to traditional silicon-based solutions. It is distinct from half-bridge or full-bridge configurations by providing only low-side switching capability.

Full Half-Bridge (H Bridge) Drivers Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the discontinued status, alternative sourcing requires verification of equivalent electrical characteristics and pinout compatibility.