EPC2234

$10.87

Description：TRANS GAN AEC 160V .008OHM 24BGA
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7bc3787938d1 Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：TRANS GAN AEC 160V .008OHM 24BGA
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：160 V
Current - Continuous Drain (Id) @ 25°C：48A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id：2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs：13.8 nC @ 5 V
Vgs (Max)：+5.5V, -4V
Input Capacitance (Ciss) (Max) @ Vds：1386 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：24-BGA (4.6x2.6)
Package / Case：24-VFBGA

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EPC2234

Overview

The EPC2234 is an automotive-grade, enhancement-mode Gallium Nitride (GaN) power transistor designed for high-frequency DC-DC conversion and other demanding applications. It features a drain-source breakdown voltage of 160 V and a continuous drain current rating of 48 A at the case temperature. The device exhibits a typical on-resistance of 8 mΩ in a compact 24-BGA package measuring 4.6x2.6 mm. With a peak pulsed drain current capability of 213 A, it supports high-power density designs while maintaining low gate charge for efficient switching performance.

Feature Summary

Automotive-grade qualification ensuring reliability for vehicle electronics
Enhancement-mode operation eliminating need for negative gate bias
Zero reverse recovery charge enabling lossless switching transitions
Ultra-low gate charge reducing driver power consumption

Applications

High-frequency DC-DC power conversion
Automotive LiDAR and Time-of-Flight systems
Class-D audio amplifiers
Low-inductance motor drivers
Wireless power transfer systems

Procurement Notes

Verify that the specific order includes the automotive-grade variant designation. Confirm package dimensions match the 24-BGA footprint requirements. Ensure thermal management solutions align with the device's heat dissipation capabilities. Check for any specific handling instructions regarding electrostatic discharge sensitivity during assembly processes.

Selection Notes

Select this component when automotive reliability standards are mandatory alongside high-frequency operation. Consider its low on-resistance for minimizing conduction losses in power stages. Evaluate the small footprint advantage for space-constrained PCB layouts. Assess compatibility with existing gate drive circuits due to enhancement-mode characteristics.

Part Context

This part belongs to Efficient Power Conversion's eGaN family of enhancement-mode transistors. It represents a shift towards silicon carbide and gallium nitride technologies in automotive sectors. The device integrates advanced GaN material properties into a standard surface-mount package. It complements broader portfolios aimed at electrification and autonomous driving technologies.

Replacement Considerations

No direct public substitute part numbers are confirmed for this specific automotive-grade configuration. Cross-reference pinouts and thermal pads if considering alternative vendors. Verify voltage ratings exceed system requirements when evaluating substitutes.