EPC2302

Overview

The EPC2302 is a surface-mount N-channel eGaN power transistor featuring a maximum drain-source breakdown voltage of 100 V and a typical continuous drain current of 101 A at ambient temperature. It utilizes an enhanced PQFN Thermal-Max package with dimensions of 3 x 5 mm, providing a footprint of 15 mm². The device exhibits a maximum on-resistance (RDS(on)) of 1.8 mΩ at a gate-source voltage of 5 V. Key electrical parameters include a gate charge of 23 nC and an input capacitance of 3.2 nF at 50 V. The thermal resistance to the case top is approximately 0.2 °C/W, facilitating efficient heat dissipation through the exposed top pad.

Feature Summary

• Zero reverse recovery charge eliminates switching losses associated with body diode conduction, enhancing reliability and reducing electromagnetic interference.
• Ultra-low gate charge and capacitance significantly reduce switching and gate driver losses compared to silicon MOSFETs.
• Enhanced Thermal-Max package design includes wettable flanks for complete side-pad solder wetting, ensuring robust mechanical connections and enabling optical inspection.
• Exposed top surface provides low thermal resistance for direct heatsinking, supporting high-frequency operation and compact system designs.

Applications

• High-frequency DC-DC converters operating within 40 V to 60 V input ranges
• 48 V brushless DC (BLDC) motor drive systems
• Synchronous rectification in AC-DC adapters and chargers
• Solar optimizers and micro-inverter topologies

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's part number against official datasheets and checking for valid traceability documentation. Ensure that the received units match the specified 7-QFN (3x5) package configuration and confirm compliance with relevant environmental standards such as RoHS requirements prior to integration into production assemblies.

Selection Notes

Select this component when designing for high power density applications requiring superior efficiency over traditional silicon solutions. The device is suitable for designs prioritizing reduced deadtime capabilities below 10 ns and lower component counts due to higher permissible switching frequencies. Evaluate thermal management strategies utilizing the exposed top pad to leverage the low thermal resistance characteristics effectively.

Part Context

This device belongs to the eGaN FET family from Efficient Power Conversion, representing enhancement-mode gallium nitride technology. It serves as a high-performance alternative to silicon MOSFETs, offering a smaller footprint for equivalent voltage and resistance ratings. The product line targets modern power electronics demanding miniaturization and improved energy conversion efficiency.

Replacement Considerations

EPC2306 is a compatible alternative within the same series offering 3.8 mΩ RDS(on). EPC2308 provides 150 V rating with 6 mΩ RDS(on) in the same package footprint. Verify pinout compatibility and thermal performance requirements before substituting these variants.