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EPC23101ENGRT is listed in the Full Half-Bridge (H Bridge) Drivers range at ChipApex. The manufacturer field lists EPC. Its product description is TRANS GAN 100V EPOWER STAGE. Review the specifications below when checking this part for your BOM.
The EPC23101ENGRT is a monolithic half-bridge driver integrating eGaN FETs in a 14-QFN package. It supports supply and load voltages from 10V to 80V with a typical on-resistance of 3.3 milliohms. The device delivers 65A output current per channel and peaks at 78A. Operating junction temperature ranges from -40°C to 125°C. Key features include bootstrap circuits, controlled slew rate, and logic interface.
Verify the specific suffix ENGRT corresponds to the tape-and-reel packaging format required for automated assembly. Confirm the 14-WQFN pinout matches the target PCB footprint design. Ensure input voltage levels remain within the specified 10V to 80V operational range during system validation.
Select this component when space-constrained designs require integrated GaN power stages. It suits applications needing high efficiency at elevated frequencies where discrete MOSFETs or IGBTs would increase size. Consider the 3.3 milliohm resistance for thermal management requirements in dense layouts.
Part of the ePower series, this device combines control logic and power switches. It replaces discrete solutions by integrating drivers and protection. The QFN package facilitates heat dissipation through exposed pads. It targets modern electronics requiring miniaturized power stages.
The device includes under-voltage lockout (UVLO) and electrostatic discharge (ESD) protection mechanisms.
Yes, the datasheet specifies compatibility with inductive, capacitive, and resistive load types.
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