Full Half-Bridge (H Bridge) Drivers EPC23104ENGRT product image

EPC23104ENGRT

$5.44
  • Description:IC GAN EPOWER STAGE 100V 10A
  • Series:ePower™
  • Mfr:EPC
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:d6d458827810 Category: Brand:

  
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EPC23104ENGRT is listed in the Full Half-Bridge (H Bridge) Drivers range at ChipApex. The manufacturer field lists EPC. Its product description is IC GAN EPOWER STAGE 100V 10A. Review the specifications below when checking this part for your BOM.

Full Half-Bridge (H Bridge) Drivers specifications for EPC23104ENGRT

  • Description:IC GAN EPOWER STAGE 100V 10A
  • Series:ePower™
  • Mfr:EPC
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Output Configuration:Half Bridge
  • Applications:DC Motors, DC-DC Converters
  • Interface:Logic
  • Load Type:Capacitive and Resistive
  • Technology:Gallium Nitride (GaN) FETs
  • Rds On (Typ):7.6mOhm LS + HS
  • Current - Output / Channel:15A
  • Current - Peak Output:78A
  • Voltage - Supply:10V ~ 80V
  • Voltage - Load:10V ~ 80V
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Features:Bootstrap Circuit, Slew Rate Controlled
  • Fault Protection:ESD, Over Voltage, Short Circuit
  • Mounting Type:Surface Mount, Wettable Flank
  • Package / Case:13-PowerWFQFN
  • Supplier Device Package:13-WQFN-HR (3.5x5)
  • Grade:-
  • Qualification:-

Full Half-Bridge (H Bridge) Drivers datasheet and documents for EPC23104ENGRT

EPC23104ENGRT

Full Half-Bridge (H Bridge) Drivers Overview

The EPC23104ENGRT is a half-bridge driver from the ePower series, designed for GaN FET applications. It features a 15A output current per channel and a peak output of 78A. The device operates with supply and load voltages ranging from 10V to 80V. It utilizes a 13-WQFN-HR (3.5x5) package with wettable flanks for surface mount installation. The typical on-resistance is 7.6 mΩ for both low-side and high-side configurations. Operating junction temperature spans -40°C to 125°C.

Full Half-Bridge (H Bridge) Drivers Feature Summary

  • Integrated bootstrap circuit for simplified gate drive power management
  • Controlled slew rate capability to manage switching speed and electromagnetic interference
  • Comprehensive fault protection including ESD, overvoltage, and short-circuit safeguards

Full Half-Bridge (H Bridge) Drivers Applications

  • DC motor control systems
  • DC-DC converter topologies

Full Half-Bridge (H Bridge) Drivers Procurement Notes

Verify the specific ordering suffix ENGRT to ensure compatibility with reel packaging requirements. Confirm that the 13-WQFN-HR footprint matches the target PCB layout, paying attention to the wettable flank solderability specifications. Cross-reference the latest datasheet revision to validate electrical parameters against current design constraints before finalizing procurement orders.

Full Half-Bridge (H Bridge) Drivers Selection Notes

Select this component when a dedicated half-bridge driver for GaN transistors is required within an 80V system. The integrated bootstrap feature reduces external component count compared to discrete solutions. Ensure the thermal management strategy supports the specified junction temperature range and that the logic interface aligns with the controlling microcontroller or PWM generator signals.

Full Half-Bridge (H Bridge) Drivers Part Context

This part belongs to the ePower family, which integrates drivers with GaN FET technology. It serves as a power stage solution for efficient energy conversion. The device distinguishes itself by combining high-current driving capabilities with robust protection mechanisms in a compact QFN package, targeting modern high-density power electronics designs.

Full Half-Bridge (H Bridge) Drivers Replacement Considerations

EPC23103ENGRT offers similar half-bridge functionality but has a lower continuous output current rating of 25A per channel and a peak current of 109A. Verify if the reduced current capacity meets the application requirements. Note that EPC23103 is listed as obsolete, whereas EPC23104 is actively supported.

EPC23104ENGRTEPC23104ENGRT
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