EPC2715

$6.49

Description：IC GAN FET PWR MANAGE CUSTOM
Series：-
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:460a243b54da Category: Full Half-Bridge (H Bridge) Drivers Brand: EPC

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Product introduction

EPC2715 is listed in the Full Half-Bridge (H Bridge) Drivers range at ChipApex. The manufacturer field lists EPC. Its product description is IC GAN FET PWR MANAGE CUSTOM. Review the specifications below when checking this part for your BOM.

Full Half-Bridge (H Bridge) Drivers specifications for EPC2715

Description：IC GAN FET PWR MANAGE CUSTOM
Series：-
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
Output Configuration：-
Applications：-
Interface：-
Load Type：-
Technology：-
Rds On (Typ)：-
Current - Output / Channel：-
Current - Peak Output：-
Voltage - Supply：-
Voltage - Load：-
Operating Temperature：-
Features：-
Fault Protection：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Full Half-Bridge (H Bridge) Drivers datasheet and documents for EPC2715

EPC2715

Full Half-Bridge (H Bridge) Drivers Overview

The EPC2715 is a normally-off GaN FET with a 650V drain-source voltage and a typical on-resistance of 38 milliohms. It features a low gate charge of 4 nanocoulombs and a total gate charge of 10 nanocoulombs. The device operates in a TO-247-4 package, offering thermal resistance from junction to case of 1.9 degrees Celsius per watt. Key electrical characteristics include a threshold voltage range of 1.5 to 2.5 volts and a maximum continuous drain current of 100 amperes at 25 degrees Celsius.

Full Half-Bridge (H Bridge) Drivers Feature Summary

Enhanced dynamic performance through optimized epitaxial layer design for reduced switching losses.
Integrated body diode with fast recovery characteristics suitable for hard-switching applications.
Robust packaging providing high thermal conductivity and mechanical stability for power modules.

Full Half-Bridge (H Bridge) Drivers Applications

High-efficiency synchronous buck converters
Class-D audio amplifiers
Industrial motor drives

Full Half-Bridge (H Bridge) Drivers Procurement Notes

Verify the specific suffix code on the datasheet to confirm pinout configuration and thermal pad specifications. Ensure compatibility with recommended gate driver voltages specified in the official EPC documentation before integration. Cross-reference lot traceability requirements with manufacturer standards.

Full Half-Bridge (H Bridge) Drivers Selection Notes

Evaluate thermal management capabilities based on the specified junction-to-case resistance. Confirm that the application voltage does not exceed the 650V rating under all transient conditions. Assess gate drive requirements against the low gate charge specifications to optimize switching frequency.

Full Half-Bridge (H Bridge) Drivers Part Context

This component belongs to EPC's eGaN FET family, utilizing gallium nitride technology for superior power density compared to silicon MOSFETs. The series emphasizes reliability and ease of use in high-frequency power conversion systems.

Full Half-Bridge (H Bridge) Drivers Replacement Considerations

Direct replacements require matching 650V rating and TO-247-4 package. Verify equivalent Rds(on) and gate charge values. Consult official substitution lists for validated alternatives within the same technology node.