EPC7011L7C

$508.28

Description：IC GATE DRVR
Series：-
Mfr：EPC Space, LLC
Package：Bulk

SKU:f5fd24d17a75 Category: Gate Drivers Brand: EPC Space, LLC

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Product introduction

EPC7011L7C is listed in the Gate Driver range at ChipApex. The manufacturer field lists EPC Space, LLC. Its product description is IC GATE DRVR. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for EPC7011L7C

Description：IC GATE DRVR
Series：-
Mfr：EPC Space, LLC
Package：Bulk
Driven Configuration：-
Channel Type：-
Number of Drivers：-
Gate Type：-
Voltage - Supply：-
Logic Voltage - VIL, VIH：-
Current - Peak Output (Source, Sink)：-
Input Type：-
Rise / Fall Time (Typ)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-
High Side Voltage - Max (Bootstrap)：-

Gate Driver datasheet and documents for EPC7011L7C

EPC7011L7C

Gate Driver Overview

The EPC7011L7C is a half-bridge GaN power stage from EPC Space, integrating input logic, gate drive, and eGaN FETs in a compact 7-pin package. It operates at 60 V DC with a typical on-resistance of 14 mΩ. Designed for high efficiency and low switching loss, it features integrated level shifting, bootstrap charging, and gate drive buffer circuits. The device offers radiation tolerance and flexible PWM driving options, making it suitable for demanding applications requiring robust performance.

Gate Driver Feature Summary

Integrates input logic interface, level shifting, bootstrap charging, and gate drive buffer circuits with eGaN FETs
Provides high efficiency and low switching loss through advanced GaN technology
Features excellent radiation tolerance for reliable operation in harsh environments

Gate Driver Applications

Radiation-tolerant motor drives
High-efficiency power conversion systems
Flexible PWM driven applications

Gate Driver Procurement Notes

Verify the specific ordering suffix to ensure compatibility with your system requirements. Confirm that the 7-pin package form factor matches your PCB layout constraints. Ensure your design supports the 60 V DC operating voltage and accounts for the 14 mΩ typical on-resistance in thermal calculations. Check for any specific radiation hardening certifications if deploying in space or high-radiation industrial settings.

Gate Driver Selection Notes

Select this component when a compact, integrated half-bridge solution is required for 60 V applications. Consider its radiation tolerance if the environment presents ionizing radiation risks. Evaluate the need for integrated gate drive and level shifting to simplify control circuitry. Compare the 14 mΩ on-resistance against thermal management capabilities in your specific application context.

Gate Driver Part Context

The EPC7011L7C belongs to EPC Space's portfolio of eGaN-based power stages. It represents a move towards highly integrated, efficient, and robust power electronics solutions. This part specifically targets applications where size, weight, and reliability are critical, leveraging the inherent advantages of Gallium Nitride technology over traditional silicon-based devices.