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Product Detailed Parameters
- Description：MOSFET N-CH 20V 1.5A 6WEMT
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：180mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：1.8 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：110 pF @ 10 V
- FET Feature：Schottky Diode (Isolated)
- Power Dissipation (Max)：700mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-WEMT
- Package / Case：6-SMD, Flat Leads
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Overview
The ES6U2T2R is a dual-component semiconductor device integrating an N-channel MOSFET and a Schottky Barrier Diode (SBD) manufactured by ROHM Semiconductor. It utilizes the WEMT6 package, equivalent to SOT-563, containing six terminals. The MOSFET section provides a drain-source voltage of 20V with a continuous drain current of 1.5A. At a gate drive of 1.5V, the on-resistance is typically 0.3 Ohms, reducing to 0.13 Ohms at 4.5V. The integrated SBD offers a reverse voltage of 20V and a forward current of 0.5A. Total power dissipation is rated at 0.7W, with a total gate charge of 1.8nC.
Feature Summary
- Integrates an N-channel MOSFET and a Schottky diode within a single compact surface-mount package for space-efficient circuit design.
- Features low on-resistance characteristics optimized for low-voltage drive applications, supporting operation at 1.5V gate drive levels.
- Includes an internal freewheeling diode to manage inductive load switching without requiring external components.
Applications
- Low-voltage DC-DC converter circuits
- Motor driver interfaces for small actuators
- Power management modules in portable electronic devices
Procurement Notes
Verify component status carefully as documentation indicates manufacturing discontinuation. Confirm availability through authorized distributors or surplus channels. Ensure the specific suffix matches the required tape-and-reel packaging format. Cross-reference datasheet revisions to confirm electrical parameters remain consistent with design requirements before finalizing procurement orders.
Selection Notes
Select this component for designs requiring combined switching and freewheeling functions in minimal footprint. Evaluate thermal performance against the 0.7W power dissipation limit under expected operating conditions. Consider the 1.5V drive capability if interfacing directly with low-voltage logic controllers. Verify that the 20V voltage ratings exceed peak circuit transients to ensure reliable long-term operation.
Part Context
This part belongs to ROHM's lineup of integrated discrete power devices combining MOSFETs with protective diodes. The WEMT6/SOT-563 package is standard for high-density surface mount applications. It serves as a solution for simplifying bill-of-materials in power stages where space constraints are critical.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material due to the component's discontinued status. Engineers should consult official replacement guides or contact the manufacturer directly for qualified alternatives.
