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The Infineon eTD510N16P60HPSA1 is a phase control thyristor module utilizing pressure contact technology and Advanced Medium Power Technology (AMPT). It features an electrically insulated base plate for Class 1 protection. The device supports a repetitive peak forward off-state and reverse voltage of 1600 V, with a maximum average on-state current of 515 A at TC=85°C. Surge current capacity reaches 15300 A at Tvj=25°C for 10ms. Key electrical parameters include a threshold voltage of 0.8 V, slope resistance of 0.375 mΩ, and a junction-to-case thermal resistance of 0.0729 K/W per module.
Verify the specific ordering suffix HPSA1 against official documentation to confirm exact configuration details. Ensure compatibility with standard mounting torque specifications: 6 Nm for mechanical connections and 12 Nm for electrical terminals. Confirm that the component meets required environmental operating ranges from -40°C to +135°C case temperature.
Select this module based on the 1600 V blocking capability and 515 A continuous current rating suitable for medium power industrial applications. Evaluate thermal management requirements using the specified RthJC of 0.0729 K/W. Consider the critical di/dt rating of 200 A/µs and dv/dt rating of 1000 V/µs when designing gate drive and snubber circuits for reliable operation.
This component belongs to the eTT/eTD series of Netz-Thyristor-Modules designed for grid-connected phase control applications. It utilizes silicon pellet technology within an industrial standard package. The module is part of Infineon's portfolio focusing on high-reliability power semiconductors for heavy-duty industrial environments.
Public confirmed substitute part numbers are not available in the provided source material. Consult official short form catalogs or manufacturer support for cross-reference information regarding equivalent modules within the same voltage and current class.
The maximum junction temperature (Tvj max) is 135 °C.
The insulation test voltage is 3.0 kV RMS for 1 minute and 3.6 kV RMS for 1 second at 50 Hz.
The critical rate of rise of on-state current ((diT/dt)cr) is 200 A/µs under DIN IEC 747-6 conditions.