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Product Detailed Parameters
- Description：THYR / DIODE MODULE DK
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Structure：-
- Number of SCRs, Diodes：-
- Voltage - Off State：-
- Current - On State (It (AV)) (Max)：-
- Current - On State (It (RMS)) (Max)：-
- Current - Non Rep. Surge 50, 60Hz (Itsm)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Voltage - Gate Trigger (Vgt) (Max)：-
- Current - Gate Trigger (Igt) (Max)：-
- Current - Hold (Ih) (Max)：-
- Grade：-
- Qualification：-
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Overview
The Infineon ETD580N16P60XPSA1 is a phase control thyristor module utilizing pressure contact technology and Advanced Medium Power Technology (AMPT). It features an electrically insulated base plate within an industrial standard package. Key electrical parameters include a repetitive peak forward off-state and reverse voltage of 1600 V, a maximum average on-state current of 586 A at TC=85°C, and a surge current rating of 13600 A at Tvj max for 10ms. The device has a threshold voltage of 0.8 V, slope resistance of 0.327 mΩ, and a thermal resistance from junction to case of 0.0645 K/W per arm under DC conditions.
Feature Summary
- Pressure contact technology ensures high reliability and robust mechanical connection.
- Advanced Medium Power Technology (AMPT) optimizes performance characteristics.
- Electrically insulated base plate provides safety isolation in Class 1 applications.
Applications
- Soft starters
- Rectifiers for drive applications
- Crowbar applications
- Power controllers
- Static switches
Procurement Notes
Verify the specific ordering suffix against the manufacturer's short form catalog to confirm exact configuration details. Ensure compatibility with mounting torque specifications: 6 Nm for mechanical connections and 12 Nm for electrical terminals. Confirm that the component meets required insulation test voltages of 3.0 kV RMS for one minute or 3.6 kV RMS for one second as specified in the datasheet.
Selection Notes
Select this module based on its 1600 V blocking capability and 586 A continuous current rating at 85°C case temperature. Consider the thermal resistance of 0.0645 K/W for heatsink design calculations. Verify that the gate trigger current does not exceed 250 mA and that the critical rate of rise of on-state current (diT/dt) remains below 200 A/µs for reliable operation.
Part Context
This component belongs to the eTT580N16P60 series of Netz-Thyristor-Modules. It is part of Infineon's portfolio of high-power discrete semiconductor modules designed for demanding industrial power conversion tasks. The module integrates silicon pellets with internal insulation using Aluminum Nitride (AlN) for enhanced thermal and electrical performance.
Replacement Considerations
Consult the official short form catalog for verified substitute part numbers. Ensure any replacement maintains identical voltage ratings, current capacities, and package dimensions to fit existing mechanical constraints without redesigning the cooling system.
FAQ
What is the maximum allowable junction temperature?
The maximum junction temperature (Tvj max) is 135 °C.
What is the critical rate of rise of on-state current?
The critical rate of rise of on-state current (diT/dt)cr is 200 A/µs.
What is the insulation test voltage specification?
The insulation test voltage is 3.0 kV RMS for 1 minute or 3.6 kV RMS for 1 second at 50 Hz.
