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Product Detailed Parameters
- Description:THYR / DIODE MODULE DK
- Series:-
- Mfr:Infineon Technologies
- Package:Tray
- Structure:Series Connection - SCR/Diode
- Number of SCRs, Diodes:1 SCR, 1 Diode
- Voltage - Off State:1.6 kV
- Current - On State (It (AV)) (Max):635 A
- Current - On State (It (RMS)) (Max):700 A
- Current - Non Rep. Surge 50, 60Hz (Itsm):19800A @ 50Hz
- Operating Temperature:135°C (TJ)
- Mounting Type:Chassis Mount
- Package / Case:Module
- Voltage - Gate Trigger (Vgt) (Max):2 V
- Current - Gate Trigger (Igt) (Max):250 mA
- Current - Hold (Ih) (Max):300 mA
- Grade:-
- Qualification:-
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Overview
The ETD630N16P60APSA1 is a phase control thyristor module utilizing pressure contact technology and Advanced Medium Power Technology (AMPT). It features an electrically insulated base plate with a 60 mm footprint. Key electrical parameters include a repetitive peak forward and reverse voltage of 1600 V, a maximum RMS on-state current of 700 A, and an average on-state current of 635 A at TC=85°C. The surge current rating is 19800 A at Tvj=25°C for 10 ms. The threshold voltage is 0.8 V, slope resistance is 0.287 mΩ, and the junction-to-case thermal resistance is 0.06 K/W per module.
Feature Summary
- Pressure contact technology ensures high reliability and robust mechanical connection.
- Advanced Medium Power Technology (AMPT) optimizes performance characteristics.
- Electrically insulated base plate provides basic insulation compliant with Class 1 safety standards.
Applications
- Soft starters
- Rectifiers for drive applications
- Crowbar applications
- Power controllers
- Static switches
Procurement Notes
Verify the specific ordering suffix to confirm the inclusion of pre-applied thermal interface material (TIM), as indicated by the TIM designation in related product variants. Ensure that the procurement documentation matches the exact technical information revision required for your design specifications. Cross-reference the SAP material number and serial number formats during receiving inspection to validate authenticity and production batch details.
Selection Notes
Select this component based on the 1600 V blocking capability and 635 A average current rating suitable for industrial power conversion. Consider the critical rate of rise of on-state current (diT/dt) of 200 A/µs when designing gate drive circuits. Evaluate the thermal resistance values against your heatsink design to ensure the junction temperature remains within the 135 °C maximum limit under expected operating conditions.
Part Context
This module belongs to the eTT/eTD series of Netz-Thyristor-Modul products from Infineon Technologies. It utilizes silicon pellets with pressure contact mounting on an aluminum nitride (AlN) internal insulator. The package adheres to industrial standard dimensions, facilitating integration into existing power electronics architectures requiring high-current phase control capabilities.
Replacement Considerations
Direct replacements must match the 60 mm base plate dimension, 1600 V voltage rating, and comparable current handling capacity. Verify compatibility with the AMPT technology characteristics and ensure the replacement device supports the same mounting torque specifications for both mechanical and electrical connections.
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