ETT420N22P60HPSA1

Overview

The Infineon ETT420N22P60HPSA1 is a phase control thyristor module utilizing pressure contact technology and Advanced Medium Power Technology (AMPT). It features an electrically insulated base plate within an industrial standard package. Key electrical parameters include a repetitive peak forward off-state and reverse voltage of 2200 V, a maximum RMS on-state current of 700 A, and an average on-state current of 427 A at TC=85°C. The surge current rating is 13400 A for 10 ms at Tvj=25°C. The threshold voltage is 0.85 V, with a slope resistance of 0.548 mΩ. Thermal performance includes a junction-to-case thermal resistance of 0.0795 K/W per arm under DC conditions. The module operates within a temperature range of -40°C to +135°C.

Feature Summary

• Pressure contact technology ensures high reliability and robust mechanical connections.
• Advanced Medium Power Technology (AMPT) optimizes semiconductor performance.
• Electrically insulated base plate provides safety isolation in Class 1 installations.

Applications

• Soft starters
• Rectifiers for drive applications
• Crowbar applications
• Power controllers
• Static switches

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact configuration details. Confirm RoHS compliance status through the manufacturer's latest product data sheet. Ensure that the component meets all relevant industry standards required for your specific installation environment before finalizing procurement.

Selection Notes

Evaluate the thermal resistance requirements based on the intended conduction angle and cooling method. Verify that the gate trigger current and voltage specifications align with the available control circuitry. Ensure the mounting torque values are strictly adhered to for both mechanical and electrical connections to maintain optimal thermal performance and device integrity.

Part Context

This component belongs to the eTT series of network thyristor modules from Infineon Technologies. It is designed for high-power AC/DC conversion and control applications. The module integrates silicon pellets with pressure contact technology, offering a compact solution for industrial power electronics where high reliability and efficient heat dissipation are critical.

Replacement Considerations

Consult official replacement lists or technical support for verified substitutes. Ensure any alternative component matches the voltage, current, and thermal specifications. Verify compatibility with existing mounting hardware and gate drive circuits before implementation.

FAQ

What is the maximum non-repetitive peak reverse voltage?

The maximum non-repetitive peak reverse voltage (VRSM) is 2300 V at temperatures ranging from +25°C to the maximum junction temperature.

What is the critical rate of rise of on-state current?

The critical rate of rise of on-state current ((diT/dt)cr) is 150 A/µs, measured according to DIN IEC 747-6 standards.

What is the holding current specification?

The maximum holding current (IH) is 300 mA, measured at a junction temperature of 25°C with a diode voltage of 12 V and a resistance of 1 Ω.