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ETT510N16P60HPSA1
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Product Detailed Parameters
- Description：SCR MODULE 1.6KV 700A MODULE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- Structure：Series Connection - All SCRs
- Number of SCRs, Diodes：2 SCRs
- Voltage - Off State：1.6 kV
- Current - On State (It (AV)) (Max)：515 A
- Current - On State (It (RMS)) (Max)：700 A
- Current - Non Rep. Surge 50, 60Hz (Itsm)：15300A @ 50Hz
- Operating Temperature：-40°C ~ 135°C (TC)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Voltage - Gate Trigger (Vgt) (Max)：2 V
- Current - Gate Trigger (Igt) (Max)：250 mA
- Current - Hold (Ih) (Max)：300 mA
- Grade：-
- Qualification：-
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Overview
The Infineon Technologies ETT510N16P60HPSA1 is a phase control thyristor module utilizing pressure contact technology and Advanced Medium Power Technology (AMPT). It features an electrically insulated base plate within an industrial standard package. Key electrical parameters include a repetitive peak forward off-state and reverse voltage of 1600 V, a maximum average on-state current of 515 A at TC=85°C, and a surge current rating of 15300 A. The module has a threshold voltage of 0.8 V, slope resistance of 0.375 mΩ, and a thermal resistance from junction to case of 0.0729 K/W.
Feature Summary
- Pressure contact technology ensures high reliability
- Advanced Medium Power Technology (AMPT) implementation
- Electrically insulated base plate for safety
Applications
- Soft starters
- Rectifiers for drive applications
- Crowbar applications
- Power controllers
- Static switches
Procurement Notes
Verify the specific ordering suffix HPSA1 against official documentation to confirm exact configuration details. Ensure compatibility with mounting torque specifications: 6 Nm for mechanical connections and 12 Nm for electrical terminals. Confirm insulation test voltage requirements align with system safety standards before procurement.
Selection Notes
Select this module based on its 1600 V blocking capability and 515 A continuous current rating. Evaluate thermal management needs using the specified RthJC value of 0.0729 K/W. Consider the critical rate of rise of on-state current (diT/dt) of 200 A/µs when designing gate drive circuits to ensure reliable triggering under all operating conditions.
Part Context
This component belongs to the eTT series of network thyristor modules designed for high-power industrial applications. It utilizes silicon pellets with pressure contacts housed in a 60 mm base plate package. The module is part of Infineon's portfolio for robust phase control solutions requiring high surge capacity and reliable operation in demanding environments.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the 1600 V rating, 515 A current capacity, and 60 mm base plate dimensions. Verify that alternative components support similar thermal resistance and gate trigger characteristics.
