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Product Detailed Parameters
- Description:THYR / DIODE MODULE DK
- Series:-
- Mfr:Infineon Technologies
- Package:Tray
- Structure:Series Connection - All SCRs
- Number of SCRs, Diodes:2 SCRs
- Voltage - Off State:1.6 kV
- Current - On State (It (AV)) (Max):586 A
- Current - On State (It (RMS)) (Max):700 A
- Current - Non Rep. Surge 50, 60Hz (Itsm):16500A @ 50Hz
- Operating Temperature:135°C (TJ)
- Mounting Type:Chassis Mount
- Package / Case:Module
- Voltage - Gate Trigger (Vgt) (Max):2 V
- Current - Gate Trigger (Igt) (Max):250 mA
- Current - Hold (Ih) (Max):300 mA
- Grade:-
- Qualification:-
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Overview
The Infineon ETT580N16P60 is a phase control thyristor module utilizing pressure contact technology and Advanced Medium Power Technology (AMPT). It features an electrically insulated base plate within an industrial standard package. Key electrical parameters include a repetitive peak forward off-state and reverse voltage of 1600 V, a maximum average on-state current of 586 A at a case temperature of 85°C, and a surge current rating of 13600 A at maximum junction temperature for a 10 ms pulse. The device has a threshold voltage of 0.8 V, a slope resistance of 0.327 mΩ, and a thermal resistance from junction to case of 0.0645 K/W per arm under DC conditions.
Feature Summary
- Pressure contact technology ensures high reliability and robust mechanical connection.
- Advanced Medium Power Technology (AMPT) optimizes performance characteristics.
- Electrically insulated base plate provides safety isolation in Class 1 applications.
Applications
- Soft starters
- Rectifiers for drive applications
- Crowbar applications
- Power controllers
- Static switches
Procurement Notes
Verify the specific ordering suffix against the manufacturer's short form catalog to confirm exact configuration details. Confirm that the component meets all necessary insulation class requirements for your specific installation environment. Ensure mounting torque specifications are strictly adhered to during assembly to maintain reliable thermal and electrical contact.
Selection Notes
Select this module based on its 1600 V blocking capability and 586 A continuous current rating at 85°C case temperature. Evaluate the thermal resistance of 0.0645 K/W for heat sink design calculations. Consider the critical rate of rise of on-state current of 200 A/µs when designing gate drive circuits to ensure safe commutation and prevent device failure.
Part Context
This component belongs to the eTT series of Netz-Thyristor-Modul products designed for high-power phase control applications. It utilizes silicon pellets with pressure contacts housed in a standardized industrial enclosure. The module is engineered for demanding environments requiring high surge currents and robust thermal management capabilities.
Replacement Considerations
Consult the official short form catalog for direct equivalents. Verify that any substitute maintains identical voltage ratings, current capacities, and physical dimensions for proper integration into existing assemblies without modification.
FAQ
What is the maximum allowable case temperature for operation?
The operating temperature range extends up to +135°C, with the maximum junction temperature also rated at 135°C.
How does the thermal resistance vary between DC and sinusoidal conditions?
The thermal resistance from junction to case is 0.0645 K/W per arm for DC conditions and 0.0335 K/W per module for 180° sinusoidal conduction.
What is the critical rate of rise of on-state current?
The critical rate of rise of on-state current is specified as 200 A/µs according to DIN IEC 747-6 standards.
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