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Product Detailed Parameters
- Description:SCR 2.2KV 1000A PB70ECO-1
- Series:-
- Mfr:Infineon Technologies
- Package:Bulk,Tray
- Voltage - Off State:2.2 kV
- Voltage - Gate Trigger (Vgt) (Max):2 V
- Current - Gate Trigger (Igt) (Max):250 mA
- Current - Hold (Ih) (Max):500 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm):30000A @ 50Hz
- SCR Type:Standard Recovery
- Operating Temperature:135°C (TJ)
- Grade:-
- Qualification:-
- Mounting Type:Chassis Mount
- Package / Case:Module
- Supplier Device Package:BG-PB70ECO-1
- Voltage - On State (Vtm) (Max):1.75 V
- Current - On State (It (AV)) (Max):923 A
- Current - On State (It (RMS)) (Max):1000 A
- Current - Off State (Max):-
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Overview
The Infineon ETZ950N22P70 is a phase control thyristor module utilizing pressure contact technology and Advanced Medium Power Technology (AMPT). It features an electrically insulated base plate within an industrial standard package. Key electrical parameters include a repetitive peak forward and reverse voltage of 2200 V, a maximum average on-state current of 923 A at TC=85°C, and a surge current rating of 30000 A. The device has a threshold voltage of 0.82 V, a slope resistance of 0.22 mΩ, and a thermal resistance from junction to case of 0.0398 K/W.
Feature Summary
- Pressure contact technology ensures high reliability and robust mechanical connections.
- Advanced Medium Power Technology (AMPT) optimizes performance for medium power applications.
- Electrically insulated base plate provides basic insulation compliant with Class 1 safety standards.
Applications
- Soft starters
- Rectifiers for drive applications
- Crowbar applications
- Power controllers
- Static switches
Procurement Notes
Verify the specific ordering suffix against the official short form catalog to ensure correct configuration. Confirm that the component meets all relevant safety and environmental compliance requirements for the intended deployment environment before integration into final assemblies.
Selection Notes
Evaluate the thermal resistance and maximum junction temperature limits to ensure adequate heatsinking for the expected load conditions. Consider the critical rate of rise of on-state current and off-state voltage when designing the gate drive and snubber circuits to prevent device failure during switching events.
Part Context
This component belongs to Infineon's network thyristor module series designed for high-power AC/DC conversion and control. It utilizes silicon pellets with pressure contact mounting, offering a standardized footprint compatible with existing industrial cooling solutions and mechanical mounting systems.
Replacement Considerations
Consult the official short form catalog for direct equivalents. Verify pinout compatibility and thermal characteristics when considering alternative manufacturers or different part numbers within the same voltage and current class.
FAQ
What is the maximum allowable case temperature for this module?
The maximum allowable case temperature depends on the conduction angle and current load, but the maximum junction temperature is rated at 135 °C.
Does the module feature an insulated base plate?
Yes, the module includes an electrically insulated base plate providing basic insulation classified as Class 1 according to IEC61140.
What is the critical rate of rise of on-state current?
The critical rate of rise of on-state current ((diT/dt)cr) is specified as 200 A/µs under DIN IEC 747-6 test conditions.
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