F1162NBGI8

RF Mixers Overview

The F1162NBGI8 is a dual-channel RF mixer IC manufactured using 0.35 µm SiGe BiCMOS technology. It operates within the 2.3 GHz to 2.7 GHz frequency range and is housed in a 36-VFQFPN (6x6) package. The device provides a typical gain of 8.9 dB with a noise figure of 9.9 dB, drawing 330 mA from a 4.75 V to 5.25 V supply.

RF Mixers Feature Summary

• Dual-channel architecture designed for multi-carrier base station receivers
• Utilizes Zero-Distortion™ technology to minimize signal interference
• Integrated into compact surface-mount packaging for efficient board space utilization

RF Mixers Applications

• LTE multi-carrier base station receivers
• TDD RF band signal processing
• Wireless communication infrastructure up/down conversion

RF Mixers Procurement Notes

Verify component authenticity through authorized channels due to discontinuation status. Confirm RoHS3 compliance and MSL level 1 handling requirements during storage and assembly. Validate pinout compatibility with existing PCB layouts before integration.

RF Mixers Selection Notes

Evaluate suitability for LTE and TDD applications requiring dual-channel downconversion. Consider the specific 2.3-2.7 GHz operational bandwidth and power consumption profile against system constraints. Ensure thermal management aligns with the 330 mA current draw in the VFQFPN package.

RF Mixers Part Context

Part of the Zero-Distortion series focusing on high-linearity RF mixing. Designed for wireless infrastructure where signal integrity is critical. Utilizes advanced SiGe BiCMOS processes to balance performance and power efficiency in dense electronic environments.

RF Mixers Replacement Considerations

Check for direct substitutes within the F1162 family or updated Renesas RF mixer portfolios. Verify if alternative dual-channel mixers meet the 2.3-2.7 GHz specification and package dimensions.