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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The F3L200R07PE4BOSA1 is a Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode module in an EconoPACK™4 package. It features an integrated NTC temperature sensor and an isolated base plate. The collector-emitter voltage (VCES) is 650 V, with a continuous DC collector current (IC nom) of 200 A at TC = 80°C. The repetitive peak collector current (ICRM) reaches 400 A for 1 ms pulses. The typical collector-emitter saturation voltage (VCEsat) is 1.55 V at Tvj = 25°C. Operating junction temperatures range from -40°C to 150°C.
Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm exact configuration details. Ensure compatibility with standard mounting torque specifications for M5 and M6 screws as defined in application notes. Confirm isolation test voltage requirements match system safety standards before procurement.
Select this component for designs requiring 650 V blocking capability and 200 A continuous current handling. Consider the positive temperature coefficient of VCEsat for parallel operation stability. Evaluate thermal resistance values for heatsink sizing based on expected switching frequencies and ambient conditions.
This module belongs to the EconoPACK™4 series utilizing IGBT4 technology. It is designed for high-efficiency power conversion systems. The series emphasizes compact packaging with enhanced electrical isolation and thermal performance suitable for demanding industrial environments.
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement maintains identical pinout, thermal characteristics, and voltage/current ratings. Verify that alternative modules support the required 3-level topology if applicable.