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Product Detailed Parameters
- Description：LOW POWER EASY AG-EASY1B-311
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The F3L75R12W1H3PB11BPSA1 is a silicon-based IGBT module from Infineon Technologies, belonging to the F3LXR12W1J series. It features a 1200 V collector-emitter voltage rating and a continuous collector current of 75 A at 25°C. The component utilizes TRENCHSTOP technology and is housed in a tray package. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.8 V at 240 A with a gate-emitter voltage of 15 V. The module supports an operating junction temperature range from -40°C to +175°C and includes an integrated NTC thermistor for thermal monitoring.
Feature Summary
- Integrates TRENCHSTOP IGBT technology for optimized switching performance.
- Features an active neutral point clamp topology suitable for three-level inverter configurations.
- Includes an embedded NTC thermistor for precise internal temperature sensing.
Applications
- Three-level inverter systems
- Industrial motor drives
- Uninterruptible power supplies
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm pinout and thermal interface compatibility. Confirm RoHS compliance status through the manufacturer's latest datasheet before integration. Ensure that the selected variant matches the required packaging format for automated assembly processes.
Selection Notes
Select this module for applications requiring high voltage isolation and efficient thermal management in three-level topologies. Evaluate the thermal resistance characteristics against the system's heat sink capabilities. Consider the gate drive requirements associated with the specific IGBT technology used in this series.
Part Context
This component is part of Infineon's broader portfolio of silicon IGBT modules designed for power conversion. It shares architectural similarities with other EasyPACK variants but is distinct in its three-level configuration and specific current ratings within the F3LXR12W1J family.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with any potential alternatives by cross-referencing pin assignments and electrical specifications with official Infineon documentation.
FAQ
What is the maximum operating junction temperature for this module?
The maximum operating junction temperature is +175°C.
Does this module include thermal monitoring capabilities?
Yes, the module integrates an NTC thermistor for thermal monitoring.
What is the collector-emitter saturation voltage at high current?
The maximum collector-emitter saturation voltage is 1.8 V when measured at 240 A with a gate-emitter voltage of 15 V.
