F48MR12W2M1HPB76BPSA1

$152.21

Description：LOW POWER EASY
Series：-

SKU:1d61401b0eef Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：LOW POWER EASY
Series：-
Mfr：Infineon Technologies
Package：Tray
IGBT Type：-
Configuration：-
Vce(on) (Max) @ Vge, Ic：-
Input：-
NTC Thermistor：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Power - Max：-
Current - Collector Cutoff (Max)：-
Input Capacitance (Cies) @ Vce：-

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F48MR12W2M1HPB76BPSA1

Overview

The F48MR12W2M1HPB76BPSA1 is a CoolSiC™ Trench MOSFET half-bridge module in the EasyPACK™ package. It features a 1200 V drain-source voltage and a continuous DC current of 75 A at 175 °C junction temperature, with a repetitive peak current rating of 200 A. The on-state resistance is typically 8.1 mΩ at 25 °C. Key mechanical attributes include PressFIT contact technology, an integrated NTC thermistor (5 kΩ at 25 °C), pre-applied thermal interface material, and rugged mounting clamps. Stray inductance is limited to 9 nH.

Feature Summary

Low inductive design for high-frequency switching applications
PressFIT contact technology for robust assembly
Integrated NTC temperature sensor for thermal monitoring
Pre-applied thermal interface material

Applications

High-frequency switching applications
DC/DC converters
UPS systems
EV DC chargers

Procurement Notes

Verify component authenticity by cross-referencing the Data Matrix barcode on the module label against Infineon's official tracking standards. Confirm that the ordering suffix B76 corresponds to the specific packaging and marking configuration required for your production line. Ensure compatibility with recommended gate drivers before finalizing procurement orders.

Selection Notes

Select this module for designs requiring low switching losses and high current density within a 1200 V system. Verify that the PCB layout accommodates the EasyPACK™ footprint and PressFIT insertion forces. Consider the thermal resistance of 0.788 K/W when designing the heat sink interface. Ensure the operating junction temperature remains within the -40 °C to 175 °C range for optimal performance.

Part Context

This component belongs to the Infineon CoolSiC™ M1H generation family, utilizing trench MOSFET technology for improved efficiency compared to planar devices. It is part of the EasyPACK™ series designed for industrial power electronics. The module integrates two switches in a single half-bridge configuration, simplifying circuit topology for medium-power inverters and converters.

Replacement Considerations

Direct pin-to-pin replacements are not explicitly listed in the provided datasheet. Evaluate other EasyPACK™ CoolSiC modules from the same manufacturer based on matching voltage ratings, current capabilities, and thermal resistance specifications. Verify mechanical dimensions and electrical characteristics carefully before substitution.

FAQ

What is the maximum baseplate operation temperature?

The maximum baseplate operation temperature is 125 °C.

How does the module handle thermal management?

It includes an integrated NTC thermistor for temperature monitoring and comes with pre-applied thermal interface material to ensure efficient heat transfer to the heatsink.