FAM65HR51DS1

Overview

The FAM65HR51DS1 is a 16-lead H-Bridge power module in the APM16 series, designed for LLC and phase-shifted DC-DC converters. It features four MOSFETs with a 650 V drain-to-source breakdown voltage and a typical on-resistance of 44 mΩ at 25°C. The module integrates a 150 nF snubber capacitor and utilizes a 0.63 mm Al2O3 DBC substrate. It provides 5 kV isolation and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Integrated H-Bridge topology with built-in snubber capacitor
• High-voltage electrical isolation via ceramic substrate
• Automotive qualification compliant with AEC Q101 standards
• Compact design optimized for low total module resistance

Applications

• On-board Charger (OBC) DC-DC Converter for EV or PHEV
• LLC Resonant Converter Topologies
• Phase-shifted Full-Bridge DC-DC Converters

Procurement Notes

Verify component authenticity through official onsemi channels or authorized distributors. Confirm that the ordering suffix matches the required package type and lead forming specifications. Ensure compliance with RoHS directives and UL94V-0 flammability ratings during procurement. Check for specific assembly location codes indicated by the marking diagram.

Selection Notes

Select this module for applications requiring high integration and simplified layout in automotive power electronics. Consider the thermal resistance characteristics and the need for external gate drivers compatible with the specified gate charge parameters. Evaluate the system's voltage requirements against the 650 V rating and ensure adequate cooling for the specified continuous current capabilities.

Part Context

This component belongs to the APM16 Series of automotive-grade power modules from onsemi. It is part of the broader portfolio of solutions for electric vehicle powertrains, specifically targeting efficient energy conversion systems. The module is designed to replace discrete component assemblies, offering improved reliability and reduced footprint in high-power density applications.

Replacement Considerations

Consult official onsemi documentation for direct cross-references. Verify pin compatibility and thermal interface requirements when considering alternative H-Bridge modules. Ensure any substitute meets the same AEC Q101 qualification and isolation voltage standards.

FAQ

Is the FAM65HR51DS1 suitable for high-frequency switching applications?

Yes, the module includes dynamic characteristics such as turn-on and turn-off times defined by design, making it suitable for resonant converter topologies like LLC.

What is the maximum operating junction temperature?

The maximum junction temperature is +150°C, while the maximum case temperature is +125°C.

Does the module include internal protection components?

Yes, the module contains an integrated AEC Q200 qualified snubber capacitor with a capacitance of 150 nF and a rated voltage of 630 V.