FBG20N04AC

FET, MOSFET Arrays Overview

The FBG20N04AC is a radiation-hardened enhancement-mode gallium nitride (eGaN) field-effect transistor manufactured by EPC Space, LLC. Designed for space and harsh environments, this component provides high-reliability power management solutions that overcome the limitations of traditional silicon-based devices. It offers guaranteed resistance to Total Ionizing Dose (TID), Low Dose Rate Sensitivity, and Single Event Effects (SEE). The device supports applications requiring smaller, lighter, and highly efficient power systems, such as DC-DC converters, LiDAR, motor drives, and ion thrusters in critical spaceborne systems.

FET, MOSFET Arrays Feature Summary

• Guaranteed radiation hardness against Total Ionizing Dose (TID), Low Dose Rate Sensitivity, and Single Event Effects (SEE)
• Enhancement-mode gallium nitride technology providing unmatched reliability compared to radiation-hardened MOSFETs
• Designed for high-efficiency power conversion in critical spaceborne systems

FET, MOSFET Arrays Applications

• DC-DC Converters
• LiDAR Systems
• Motor Drives
• Ion Thrusters

FET, MOSFET Arrays Procurement Notes

Verify specific radiation qualification reports and datasheet parameters directly with EPC Space, LLC or authorized distributors. Confirm TID and SEE tolerance levels required for your mission profile. Ensure compatibility with existing gate drive circuits designed for eGaN FETs. Request official documentation regarding handling and storage conditions for space-grade components.

FET, MOSFET Arrays Selection Notes

Select the FBG20N04AC when mission-critical reliability in radiation environments is paramount. It serves as a superior alternative to radiation-hardened silicon MOSFETs due to enhanced performance and size reduction. Consider its suitability for high-frequency applications where efficiency and thermal management are constrained by weight and volume limits typical in aerospace designs.

FET, MOSFET Arrays Part Context

EPC Space, LLC specializes in revolutionary high-reliability radiation-hardened eGaN power management solutions. This product line aims to accelerate advances in critical spaceborne systems by displacing silicon limitations. The FBG20N04AC represents part of their portfolio offering smaller, lighter, and space-heritage proven technologies for harsh environments beyond standard consumer or industrial markets.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Evaluate alternatives based on matching radiation hardness guarantees (TID/SEE) and eGaN enhancement-mode characteristics. Cross-reference with other EPC Space radiation-hardened offerings if pinout or electrical specifications differ.